Morphological and photoluminescence study of porous thin SiC layer grown onto silicon

Bourenane, K.; Keffous, A.; Kechouache, M.; Nezzal, G.; Boukezzata, A.; Kerdja, T.

doi:10.1002/sia.2697

Cited by 7 publications

(4 citation statements)

References 13 publications

(7 reference statements)

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“…The SiC etching mechanism proposed by Shor and Kurtz 16 has been generally accepted. 13,[17][18][19][20][21][22][23] According to their hypothesis, anodic etching of SiC in aqueous HF occurs in two steps: oxidation of SiC and dissolution of the formed oxide. They suggested that oxidation of SiC occurs via the following reactions: 16 SiC…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, most studies have fabricated porous SiC using bulk crystalline SiC, while few studies have fabricated porous SiC from thin films. 2,3,[7][8][9][10][11][12][13][14] SiC thin films are easy to make and relatively inexpensive compared with bulk SiC, and we believe that thin films are suitable for most applications. In many applications, the SiC thin film may be amorphous rather than crystalline: for example, researchers have reported using amorphous SiC thin films to fabricate humidity sensors 2 and ammonia sensors.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the anodic etching current density on the morphology of the porous SiC layer

Cao¹,

Luong

Dao

2014

AIP Advances

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In this report, we fabricated a porous layer in amorphous SiC thin films by using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the porous amorphous SiC layer changed as the anodic current density changed: At low current density, the porous layer had a low pore density and consisted of small pores that branched downward. At moderate current density, the pore size and depth increased, and the pores grew perpendicular to the surface, creating a columnar pore structure. At high current density, the porous structure remained perpendicular, the pore size increased, and the pore depth decreased. We explained the changes in pore size and depth at high current density by the growth of a silicon oxide layer during etching at the tips of the pores.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of the anodic etching current density on the morphology of the porous SiC layer

Cao¹,

Luong

Dao

2014

AIP Advances

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“…The anodic etching of SiC substrates is determined by two concurrent reactions. One is the formation of silicon oxides (SiO and SiO 2 ), and the other is the dissolution of the formed silicon oxides as shown in equations (1)-( 4) [13,[23][24][25]:…”

Section: Resultsmentioning

confidence: 99%

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Wang¹,

Huang²,

Guo³

et al. 2020

Nanotechnology

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Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in the exploration of novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically etched at a constant current density of 392.98 mA cm−2 in an electrolyte made up of hydrofluoric acid and deionized water. The layering of a SiC porous layer and periodic fluctuation of the voltage were witnessed for the first time, with the layering phenomenon corresponding well to the voltage period. However, no such phenomenon was observed when the SiC substrates were anodic etched under the same conditions with magnet stirring. As a result, the periodic variation of voltage was hypothesized to be the cause of regular layering during constant current electrochemical etching. Electrochemical etching in potentiostatic mode was thus performed at different voltages. We found that the diameter of the SiC nanopores increased while the thickness of the sidewall decreased with the increasing voltage. Based on the experimental findings, a model of mass transport was proposed. The mass transport process leads to periodic changes in resistance, hence the periodic change in voltage. This successfully explained the reason for the layering. Furthermore, SiC substrates were also electrochemically etched at high and low current densities, finding the existence of a threshold current density for the occurrence of the layering. Energy dispersive x-ray spectroscopy analysis showed that the composition of the SiC porous layer remained unchanged compared to the pure SiC wafer, implying that the peeling-off of the SiC porous layer obtained by electrochemical etching can be directly adopted for use on devices requiring a SiC porous structure.

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“…What is more, HF/H 2 O 2 does have an effect on enhancing uniformity on 6H-SiC [ 10 ]. The electrochemical etching SiC process in other works, without H 2 O 2 , can be listed as the following [ 11 ]:…”

Section: Resultsmentioning

confidence: 99%

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

Tan

Chen

et al. 2014

Nanoscale Res Lett

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In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (Toff) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with Toff. The hole concentration decreasing at the pore tips during the Toff is the main reason for uniformity.

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Morphological and photoluminescence study of porous thin SiC layer grown onto silicon

Cited by 7 publications

References 13 publications

Influence of the anodic etching current density on the morphology of the porous SiC layer

Influence of the anodic etching current density on the morphology of the porous SiC layer

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

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