Morphological and optical studies of zinc oxide doped MgO

Othman, Zayani Jaafar; Matoussi, Adel

doi:10.1016/j.jallcom.2016.02.069

Cited by 25 publications

(4 citation statements)

References 36 publications

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“…The refractive index values are also dependent on the experimental optical measurement technique used (spectrophotometry or spectroscopic ellipsometry) and the approaches used for extraction of the refractive index from these measurements [78]. Table 1 presents a small part of the reference data for n values of ZnO materials, prepared by different methods [6,78,79,[81][82][83][84][85][86][87][88][89][90][91]. It can be seen that the refractive index values vary in a very broad range.…”

Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

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This work presents a facile sol–gel method for the deposition of ZnO and ZnO:Mg films. The films are spin coated on silicon and quartz substrates. The impact of magnesium concentrations (0, 0.5, 1, 2 and 3 wt%) and post-annealing treatments (300–600 °C) on the film’s structural, vibrational and optical properties is investigated. Undoped ZnO films crystallize in the wurtzite phase, with crystallite sizes ranging from 9.1 nm (300 °C) to 29.7 nm (600 °C). Mg doping deteriorates the film crystallization and shifting of 002 peak towards higher diffraction angles is observed, indicating the successful incorporation of Mg into the ZnO matrix. ZnO:Mg films (2 wt%) possess the smallest crystallite size, ranging from 6.2 nm (300 °C) to 25.2 nm (600 °C). The highest Mg concentration (3 wt%) results into a segregation of the MgO phase. Lattice constants, texture coefficients and Zn–O bond lengths are discussed. The diminution of the c lattice parameter is related to the replacement of Zn2+ by Mg2+ in the ZnO host lattice. The vibrational properties are studied by Fourier transform infrared (FTIR) spectroscopy. IR lines related to Mg–O bonds are found for ZnO:Mg films with dopant concentrations of 2 and 3 wt%. The optical characterization showed that the transmittance of ZnO:Mg thin films increased from 74.5% (undoped ZnO) to about 89.1% and the optical band gap energy from 3.24 to 3.56 eV. Mg doping leads to a higher refractive index compared to undoped ZnO films. The FESEM (field emission scanning electron microscopy) technique is used for observation of the surface morphology modification of ZnO:Mg films. The doped ZnO films possess a smoother grained surface structure, opposite to the wrinkle-type morphology of undoped sol–gel ZnO films. The smoother surface leads to improved transparency of ZnO:Mg films.

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Section: Uv-vis Spectroscopy-optical Characterizationmentioning

confidence: 99%

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

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“…In this work, zinc oxide (ZnO) crystal has been chosen as a crystal to be grown with zinc silicate (Zn 2 SiO 4 ) crystal due to its ability to develop semiconductor material with huge direct transition allowed optical band gap energy (3.37 eV) [16] as well as high exciton binding energy (more than 60 meV) [17] added with exceptionally good thermal and chemical stability [18]. Therefore, ZnO crystal can be a proper application as a phosphor host in light-emitting diodes [19].…”

Section: Introductionmentioning

confidence: 99%

Influence of Calcination Temperature on Crystal Growth and Optical Characteristics of Eu3+ Doped ZnO/Zn2SiO4 Composites Fabricated via Simple Thermal Treatment Method

et al. 2021

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This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.

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“…For monolithically integrated module efficiency calculations, one-dimensional Fresnel calculations were performed by using the transfer-matrix method. Layer thicknesses and material optical constants − were used to calculate the transmittance of above-band-gap photons (400–1250 nm) through an industry-standard stack of 50 nm Zn(O,S,OH)/50 nm Zn 0.8 Mg 0.2 O/B:ZnO (Al:ZnO optical constants were used for lack of B:ZnO data) layers and into the CIGS layer. The calculated transmittance was weighted to the AM1.5G spectrum, integrated, and scaled to the world record short-circuit current density ( J SC ).…”

Section: Methodsmentioning

confidence: 99%

Macroscopic Nonuniformities in Metal Grids Formed by Cracked Film Lithography Result in 19.3% Efficient Solar Cells

Muzzillo

Reese

Mansfield

2020

ACS Appl. Mater. Interfaces

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Cracked film lithography (CFL) is an emerging method for patterning transparent conductive metal grids. CFL can be vacuum-and Ag-free, and it forms more durable grids than nanowire approaches. In spite of CFL's promising transmittance/ grid sheet resistance/wire spacing tradeoffs, previous solar cell demonstrations have had relatively low performance. This work introduces macroscopic nonuniformities in the grids to improve the short-circuit current density/fill factor tradeoff in small area Cu(In,Ga)Se 2 cells. The performance of optimized baseline grids is matched by CFL grids with microscopic openings and macroscopic patterns, culminating in a 19.3% efficient cell. Simulations show that uniform CFL grids are enhanced by patterning because it leads to better balance among shadowing, grid resistance, and transparent conductive oxide resistance losses. Thin-film module efficiency calculations are performed to highlight the performance gains that metal grids can enable by eliminating the transparent conductive oxide losses and widening monoliths. Adding the patterned CFL grids demonstrated in this work to CIGS modules is predicted to reach 0.7% higher efficiency (absolute) than screen-printed grids.

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Morphological and optical studies of zinc oxide doped MgO

Cited by 25 publications

References 36 publications

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Influence of Calcination Temperature on Crystal Growth and Optical Characteristics of Eu3+ Doped ZnO/Zn2SiO4 Composites Fabricated via Simple Thermal Treatment Method

Macroscopic Nonuniformities in Metal Grids Formed by Cracked Film Lithography Result in 19.3% Efficient Solar Cells

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