MoO3 thin films prepared via MOCVD from a volatile molybdenyl complex

Ballarin, Barbara; Brescacin, Enrico; Rizzi, G.; Tondello, Eugenio

doi:10.1039/jm9950501147

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…Critically, what both techniques require is access to suitable molecular precursors. − Even though this need has motivated the search for and discovery of a number of Mo precursors for ALD and/or CVD, ,,− a number of which are now commercially available, − there is still a vast disparity between the amount of Mo-based materials work being done and the availability of diverse molecular starting materials. Thus, there is a continuing need to discover new molecular building blocks which can enable different vapor phase growth processes over broad temperature ranges and with a variety of co-reactants.…”

Section: Introductionmentioning

confidence: 99%

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

Shaw

Ali

Currie

et al. 2023

ACS Appl. Mater. Interfaces

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The synthesis, characterization, and thermogravimetric analysis of tris(N,N′-di-isopropylacetamidinate)molybdenum(III), Mo-(iPr-AMD) 3 , are reported. Mo(iPr-AMD) 3 is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200−314 °C for samples in the 3−20 mg range. To validate the utility of Mo(iPr-AMD) 3 , we demonstrate aerosol-assisted CVD growth of MoO 3 from benzonitrile solutions of Mo(iPr-AMD) 3 at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD) 3 /Ar purge/300 W O 2 plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD) 3 as a stable, high-temperature precursor for both CVD and ALD processes.

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Section: Introductionmentioning

confidence: 99%

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

Shaw

Ali

Currie

et al. 2023

ACS Appl. Mater. Interfaces

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“…Although X-ray photoelectron spectroscopy work on oxides of vanadium and molybdenum has been reported Vander Laan 1987, 1988;Goering et al 1994), studies on powders and thin films of varying V205 and MoO3 compositions have not been reported. Like many transition metal oxides, V205 and MoO3 find extensive use in catalysts, intercalation *Author for correspondence compounds, electrochromic applications and cathodic material for lithium batteries (Ballarin et al 1995;Ragot et al 1995). The electrochromic behaviour of V205 and MoO3 thin films deposited by various methods has been reported to be highly structure-dependent, and the metal insulator transition in .VOx is very much complicated due to crystallographic changes taking place at transition (Huberts et al 1996).…”

Section: Introductionmentioning

confidence: 99%

Vacancy-induced electronic states in substoichiometric V2 −x Mo x O3 ±y thin films and powders—A soft X-ray emission study

et al. 1999

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Vanadium oxide as well as molybdenum oxide thin films have been found to show electrochromism and metal insulator transitions. Incorporation of vanadium ion into molybdenum oxide lattice not only changes the lattice parameters but also shows prominent spectral changes in X-ray emission spectra. K~l-3 emission spectra of vanadium in different alloy films of V2Os-MoO3 system have been studied here and these have been compared with the X-ray emission spectra of similar composition of V2Os-MoO3 powders. For K~_3 emission, the difference in values of asymmetry indices of thin films and powders is marginal, although considerable tailing towards high energy is observed in thin films. By curve fitting procedure, the K/~_3 emission spectra have been resolved to several gaussian peaks, and these have been explained on the basis of vacancy-induced electronic states, crossover transitions advocated in molecular orbital theory and plasmon oscillation.

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Molybdenum x-ray emission spectroscopic study of vacancy-induced electronic states in V2O5-MoO3 thin films and powders

et al. 2000

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X‐ray emission spectra in compound thin films are scarce, although such studies in metals, alloys and other inorganic compounds are available. In this study, compound thin films of V2O5–MoO3 and powders of same compositions were investigated to see the effect of V2O5 incorporation in an MoO3 matrix. For this purpose, Kβ, Lα and Lβ emissions from Mo present in these matrices were measured. The full width at half‐maximum (FWHM) of Lα2 and Lβ1 in thin films were found to be different from that of powders. Most of these emission bands show a low asymmetry index before these are split into separate bands. All these findings have been explained on the basis of vacancy production, core hole lifetime, crystal structure and stoichiometric variation of MoO3 in the V2O5 matrix. Copyright © 2000 John Wiley & Sons, Ltd.

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MoO3 thin films prepared via MOCVD from a volatile molybdenyl complex

Cited by 9 publications

References 7 publications

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

Vacancy-induced electronic states in substoichiometric V2 −x Mo x O3 ±y thin films and powders—A soft X-ray emission study

Molybdenum x-ray emission spectroscopic study of vacancy-induced electronic states in V2O5-MoO3 thin films and powders

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