Abstract:Metal-oxide thin films have recently become good candidates for the hole transport layer material, for solving the stability problem in organic photovoltaic devices. Metal oxide semiconductors (MoOx, WO3, V2O5) are very promising because of their suitable optoelectronic properties, ambient stability, high work function, and solution processability. Intrinsic n-type behavior of molybdenum oxide (MoOx) is found to enhance p-type doping effect on single-walled carbon nanotubes. In this study, the effect of using … Show more
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