Monte Carlo treatment of electron-electron collisions

Matulionis, A.; Požela, J.; Reklaitis, A.

doi:10.1016/0038-1098(75)90131-3

Cited by 56 publications

(16 citation statements)

References 7 publications

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“…A Monte-Carlo determination on the time response of the electron distribution function in the central valley of GaAs at ! P = 300K recently carried out by Matulionis [9] shows that t h e non-parabolicity of the central valley plays no role in the heating process for those field strengths, the values of which exceed the critical value E = 2.5 kV/cm for the onset of intervalley scattering. I n the same paper it was demonstrated that the influence of the non-parabolicity on the response speed of the transport quantities turns out to be of no importance for fields smaller than ca.…”

Section: Resultsmentioning

confidence: 97%

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Dynamical Response of Electrons in GaAs at 300 K

Brauer¹

1977

Physica Status Solidi (b)

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Numerical calculations are made on the time response of the high-field electron distribution function a t T = 300 K in GaAs both for instantaneously and periodically varying electric fields.According to Rees the method of calculation is an iterative process due to Kellogg for solving a homogeneous Fredholm integral equation of the second kind derived from the Boltzmann equation. The time evolution of the average drift velocity, the mean energy of the electrons in the central valley, and the fraction of electrons in the satellite valleys is presented for an instantaneous appli. cation E ( t ) = E O ( t ) of the electric field. Finally the time dependence of the average drift velocity and the satellite valley population fraction is calculated for a sinusoidal electric field E(t) = E,, x x sin ot with Eac = 5 kV/cm and o = 2.2 x 1011 rad/s. The results obtained are discussed, taking into account the band structure and the effective scattering processes. Es werden numerische Berechnungen zum zeitlichen Verhalten der Verteilungsfunktion heiDerElektronen fur T = 300 K in GaAs sowohl bei stufenformiger als auch bei periodischer VerLnderung des elektrischen Feldes durchgefuhrt. Die Methode der Berechnung besteht nach Rees darin, die in eine homogene Fredholmsche Integralgleichung der zweiten Art umgeformte Boltzmann-Gleichung durch ein Kelloggsches Iterationsverfahren zu losen. Fur stufenformig verLnderliches elektrisches Feld E(t) = E . O(t) wird die zeitliche Entwicklung der mittleren Driftgeschwindigkeit, der mittleren Energie der Elektronen im Zentraltal sowie der Elektronenubergangsrate in die Satellitentiler des GaAs angegeben. Fur ein periodisch verLnderliches elektrisches Feld der Form E ( t ) = Eac . sin ot wird die ZeitabhLngigkeit der mittleren Driftgeschwindigkeit und der Elektronenubergangsrate in die Satellitentiiler fur E,, = 5 kV/cm und o = 2,2 x 10l1 rad/s berechnet. Die erhaltenen Resultate werden an Hand der Bandstruktur und der wirksamen Streuprozesse diskutiert.

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Section: Resultsmentioning

confidence: 97%

“…However, the rather slow descent of the drift velocity agrees with the inertly proceeding population of the satellite valleys. I n this connection it has to be mentioned that the overswing effect appears also for carrier ensembles in a single valley [4], [9], [la]. The dashed curve denotes the zero-field distribution.…”

Section: Resultsmentioning

confidence: 99%

Dynamical Response of Electrons in GaAs at 300 K

Brauer¹

1977

Physica Status Solidi (b)

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“…First, ee-scattering was neglected and second, that scattering mechanism was supposed to dominate in Eq. (2). In the first case we used the twoparticle Monte Carlo method proposed in [6], while in the second one the electron temperature approximation was employed.…”

Section: T ≈ T 0 / 5 ( T 0 B E I N G T H E C H a R A C T E R I S T I mentioning

confidence: 99%

“…This effect can be realized, when both ee-scattering and optical scattering is significant in electron system. Although ee-scattering mechanism has been widely investigated [2][3][4][5], the conditions at which the greatest influence of inter-particle collision can be observed has not been yet determined.In the present paper ee-scattering influence on electron mean energy change in slightly heating electric field (warm electrons) was investigated. The conditions at which ee-scattering influences significantly warm electron parameters were established.…”

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Electron-Electron Scattering Influence on Hot Electron Transport in Semiconductors

Dedulewicz

Kancleris

1991

Acta Phys. Pol. A

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Electron-electron scattering has been shown to manifest itself when scattering by optical phonons is of importance. The strongest influence has been observed in the slightly heated electron system at the lattice temperature T ≈ T 0 / 5 ( T 0 b e i n g t h e c h a r a c t e r i s t i c t e m p e r a t u r e o f o p t i c a l p h o n o n ) .PACS numbers: 72.20.Ht It is known [1] that electron-electron scattering can increase hot electron excess energy dissipation and in this way influence its distribution function and parameters measured experimentally. This effect can be realized, when both ee-scattering and optical scattering is significant in electron system. Although ee-scattering mechanism has been widely investigated [2][3][4][5], the conditions at which the greatest influence of inter-particle collision can be observed has not been yet determined.In the present paper ee-scattering influence on electron mean energy change in slightly heating electric field (warm electrons) was investigated. The conditions at which ee-scattering influences significantly warm electron parameters were established. Electron system energy losses were considered as well. The investigation was carried out up to electron concentration when ee-scattering and energy relaxation via electron-phonon scattering is of the same efficiency.To calculate electron system mean energy and power losses in heating electric field the symmetrical part of the distribution function is to be known. In warm electron region it can be written down in the following way:where fo and of are the equilibrium distribution function and E 2 correction to it, respectively, and E* is a constant measured in the units of electric field. Making use (353)

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Current-voltage characteristics of InSb at room temperature and high hydrostatic pressure

Dobrovolskis

Krotkus

Požela

et al. 1980

Phys. Stat. Sol. (a)

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Low field electron mobility and threshold field of negative differential conductivity in InSb at room temperature is investigated experimentally as a function of hydrostatic pressure below 3100 MPa. A comparison is made between the experimental data and those of Monte Carlo calculation and information about the acoustic deformation potential, intervalley separation, and change in crystal dielectric constants under pressure is obtained.

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Monte Carlo treatment of electron-electron collisions

Cited by 56 publications

References 7 publications

Dynamical Response of Electrons in GaAs at 300 K

Dynamical Response of Electrons in GaAs at 300 K

Electron-Electron Scattering Influence on Hot Electron Transport in Semiconductors

Current-voltage characteristics of InSb at room temperature and high hydrostatic pressure

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