Monte Carlo study of nonequilibrium phonon effects in GaAs

Mickevičius, R.; Reklaitis, A.

doi:10.1016/0038-1098(87)90630-2

Cited by 26 publications

(29 citation statements)

References 5 publications

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“…The final state of the probing electron after each scattering on phonons has been determined by the MC method proposed in Ref. [6]. LO phonon lifetime was taken to be τ ph = 2 ps, the ionized impurity and electron densities were taken to be N imp = n e = 10 17 cm −3 .…”

Section: Effects Of Excess Phonons In Cubic Ganmentioning

confidence: 99%

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

Brazis¹,

Raguotis²

2005

Acta Phys. Pol. A

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Electron transport characteristics of GaN crystals in high electric fields are shown to be essentially influenced by different optical phonon modes inherent to the hexagonal and cubic phases of these compound crystals. Additional optical phonon modes (≈ 26 meV) competing with the higher-energy ones (≈ 92 meV) in hexagonal GaN, together with the low-lying satellite valley (Γ 3 ), dramatically reduce the drift mobility of electrons in comparison with conventional models. Presented Monte Carlo data are in excellent agreement with the time-of-flight experiment. The cubic GaN crystal phase with its satellite electron energy valleys shifted well above the main (Γ1) valley is chosen as a convenient medium for elucidating the role of high-energy longitudinal optical phonon accumulation. A simple efficient one-particle Monte Carlo method is proposed for an account of excess phonons. Phonon heating is shown to bring about the moderate additional reduction of the drift mobility and an increase in mean electron energy.

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Section: Effects Of Excess Phonons In Cubic Ganmentioning

confidence: 99%

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

Brazis¹,

Raguotis²

2005

Acta Phys. Pol. A

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“…the phonon number in the configuration space unit, enters as a control factor in the rate of electron scattering from the initial state k to the final state k . For the polar optical scattering, the rate is [8]:…”

Section: Modelmentioning

confidence: 99%

LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

Raguotis

Brazis

2011

Acta Phys. Pol. A

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“…Quasi-elastic scattering of electrons on longitudinal acoustical (LA) phonons is modeled as suggested by Canali et al [11], and the inelastic scattering on longitudinal optical (LO) phonons is taken into account according to Mickevičius and Reklaitis [10]. Electron scattering on impurity ions and ontrons on the piezo-potential is considered using the method proposed by Ridley [12].…”

mentioning

confidence: 99%

“…The mean rates λ em,ab of phonon emission and absorption by one electron are calculated after Ref. [10]. The difference of initial-and final state wavevectors k-k′ of electron equals to the absorbed or emitted phonon wave-vector q; the rate of electron scattering is known to be higher for lower values of q = ' k k − .…”

mentioning

confidence: 99%

“…2 Modeling outline We employ the Ensemble MC method [10] and the One-Particle MC method for the modeling of electron and phonon response to electric field. Quasi-elastic scattering of electrons on longitudinal acoustical (LA) phonons is modeled as suggested by Canali et al [11], and the inelastic scattering on longitudinal optical (LO) phonons is taken into account according to Mickevičius and Reklaitis [10].…”

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Electron and phonon dynamics in zincblende gallium nitride

Brazis

Raguotis

2009

Phys. Status Solidi (c)

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This report presents new Monte Carlo simulation results revealing the ballistic stage of growth of the phonon number, electron velocity and energy upon the switching‐on electric field, the shape of electron and phonon stationary distributions in high electric fields, as well as electron cooling and phonon number relaxation rates after switching‐off the field in zincblende gallium nitride crystals. LO phonon band population inversion is feasible here up to the room temperature relative to the TO phonons, and below T < 80 K – relative to the LA‐phonon band provided that the phonon lifetimes satisfy the conditions of ≥ 2 ps (LO) and ≥ 2 ns (LA). Phonon decay scenarios with the stimulated emission of infrared‐range photons are discussed including phonon difference transitions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Monte Carlo study of nonequilibrium phonon effects in GaAs

Cited by 26 publications

References 5 publications

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

Electron and phonon dynamics in zincblende gallium nitride

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