Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode

Reklaitis, A.; Reggiani, L.

doi:10.1063/1.1702144

Cited by 72 publications

(26 citation statements)

References 34 publications

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“…While parasitics do play an important role in the frequency performance, recent advances in ohmic contact technology have achieved ultra-low resistance 2,5,6 (< 0.1 Ω.mm), thereby making the channel transit delay the main component of the overall delay in GaN HEMTs. Monte Carlo simulations in GaN have predicted peak electron drift velocities as high as 3 x 10 7 cm/s, with comparatively lower saturation velocities up to ~ 2 x 10 7 cm/s, limited mainly by optical phonon scattering [7][8][9][10][11] . From the total time delay analysis in recent ultra-scaled GaN HEMT results, the average electron velocity, vave, of the devices was found to be in the range from 1 × 10 7 to 2.8 × 10 7 cm/s [1][2][3][4] .…”

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confidence: 99%

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj

Shoron

Park

et al. 2015

Applied Physics Letters

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Abstract:We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10 7 cm/s at a low sheet charge density of 7.8 x 10 11 cm -2 . A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.a)

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confidence: 99%

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Bajaj

Shoron

Park

et al. 2015

Applied Physics Letters

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“…In addition, thanks to high thermal conductivity of GaN, these devices can operate at high DC current densities. 129 Moreover, in such devices, fluctuations of the space charges affect the generation of electron-hole pairs as a negative feedback. As a result, the avalanche noise is predicted to be suppressed up to three times of magnitude for the current multiplication factor greater than ten.…”

Section: Gan-based Impact Avalanche Transit Time Diodes For Thz Frequmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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“…The electron scattering mechanisms considered in the simulations include ionized impurity, polar optical, deformation acoustic, piezoelectric, and intervalley scattering. The numerical values of GaN material parameters are taken the same as in [2]. The investigated double-barrier structure consists of a repetition of a 15 nm undoped Al 0.4 Ga 0.6 N barrier sandwiched between two n-GaN layers (n = 1 × 10 17 cm −3 ) with a thickness of 250 nm.…”

Section: Modelmentioning

confidence: 99%