Monte Carlo simulation of silicon amorphization during ion implantation

Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.

doi:10.1109/43.736563

Cited by 6 publications

(5 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure a shows the deposited nuclear energy (log scale) at an equivalent areal dose of 3.0 × 10 17 He + cm −2 and a 15 nm × 1000 nm scan for the x – y plane (at a depth of 10 nm) and Figure b shows the y – z plane (perpendicular to the scan axis at the x = 0 position). For context, we note that Bohmayr et al reports a nuclear energy density of ≈12 eV per atom is required for amorphizing silicon (which is close to our simulated estimates of ≈5.5 eV per atom for silicon). For the simulated thin membrane STEM sample, the nuclear energy loss is on the order of 0.3 eV per atom at a distance of 120 nm from the etch edge, which is reasonable and consistent with the discernible damage observed in the STEM images.…”

Section: Resultssupporting

confidence: 89%

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

et al. 2017

View full text Add to dashboard Cite

A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe2 relative to standard ion milling. The etching process utilizes the XeF2 precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe2 with doses 5× lower than standard He+ milling. This enables the formation of high‐resolution WSe2 nanoribbons with dimensions less than 10 nm. The WSe2 nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He+ milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe2.

show abstract

Section: Resultssupporting

confidence: 89%

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

et al. 2017

View full text Add to dashboard Cite

show abstract

“…As with the damage function, we determined the deposited energy necessary for amorphization of Si. While Bohmayr et al determined from simulations that Si amorphization occurs at a deposited nuclear energy of 12 eV/atom, our simulations suggest an energy of about 5.5 eV/atom. This energy is exceeded by the milling simulation throughout most of the computational domain (or 150 nm perpendicular to the long scan axis), and for the chemically assisted etching simulation is exceeded in a somewhat smaller region.…”

Section: Resultscontrasting

confidence: 75%

Laser-Assisted Focused He⁺ Ion Beam Induced Etching with and without XeF₂ Gas Assist

Stanford

Mahady

Lewis

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Focused helium ion (He) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF precursor provides a chemical assist for enhanced material removal rate. Finally, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ∼9× relative to the pure He sputtering process. These He induced nanopatterning techniques improve material removal rate, in comparison to standard He sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He probe as a nanopattering tool.

show abstract

“…nuclear stopping. 11,12 Comparing the composite damage energy density of H ϩ , H 2 ϩ , and H 3 ϩ with the threshold energy of Si ͑about 15 eV͒, our hydrogen PIII process causes significant damage to the crystal structure of silicon and can render the region in the vicinity of the projection range R p amorphous. It should also be pointed out that a high concentration of implanted hydrogen will cause high pressure or stress within the Si crystal, contributing to additional damage to the crystal structure.…”

Section: Resultsmentioning

confidence: 99%

Damage in hydrogen plasma implanted silicon

Wang

Zeng

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

The damage and defects created in silicon by hydrogen plasma immersion ion implantation ͑PIII͒ are not the same as those generated by conventional beamline ion implantation due to the difference in the ion energy distribution and lack of mass selection in PIII. Defect generation must be well controlled because damage in the implanted and surface zones can easily translate into defects in the silicon-on-insulator structures synthesized by the PIII/wafer bonding/ion-cut process. The defect formation and its change with annealing temperature were investigated experimentally employing channeling Rutherford backscattering spectrometry, secondary ion mass spectrometry, and atomic-force microscopy. We also calculated the damage energy density of the three dominant hydrogen species in the plasma ͑H ϩ , H 2 ϩ , and H 3 ϩ ͒ as well as displacement of silicon atoms in the silicon wafer. H 2 ϩ creates the most damage because its damage energy density is very close to the silicon threshold energy. The effects of atmospheric gaseous impurities unavoidably coimplanted from the overlying plasma are also modeled. Even though their concentration is usually small in the plasma, our results indicate that these gaseous impurities lead to significant silicon atom displacement and severe damage in the implanted materials.

show abstract

Monte Carlo simulation of silicon amorphization during ion implantation

Cited by 6 publications

References 40 publications

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Laser-Assisted Focused He⁺ Ion Beam Induced Etching with and without XeF₂ Gas Assist

Damage in hydrogen plasma implanted silicon

Contact Info

Product

Resources

About

Monte Carlo simulation of silicon amorphization during ion implantation

Cited by 6 publications

References 40 publications

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Laser-Assisted Focused He+ Ion Beam Induced Etching with and without XeF2 Gas Assist

Damage in hydrogen plasma implanted silicon

Contact Info

Product

Resources

About

Laser-Assisted Focused He⁺ Ion Beam Induced Etching with and without XeF₂ Gas Assist