Monte Carlo Simulation of Semiconductor Devices

Moglestue, C.

doi:10.1007/978-94-015-8133-2

Cited by 126 publications

(98 citation statements)

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“…Relative mass г 0.75 [12] L 0.55 [12] X 0.30 [12] 0.15 [15] 0.60 [15] 0.50 [15] Energy (ev) г 9.94 [13] L 14.3 [13] X12.04 [13] 3.38 [15] 5.64 [15] 4.57 [15] in real space and in the waves vectors space [11]. Let us consider for each carrier, an initial wave vector Trans.…”

Section: Bn Ganmentioning

confidence: 99%

“…This scattering is very weak in valley Γ; its effe often shielded by the large number of inter-valley scat which are predominant in side valleys. The probabilit acoustic scattering per unit time is given by [17]:…”

Section: Acoustic Scatterings Ratesmentioning

confidence: 99%

“…In general terms, the method is based on a drawing of lots for the interactions experienced by carriers during their movements within the crystal lattice using probability laws. It follows the behavior of each electron subjected to an electric field E  in real space and in the waves vectors space [11].…”

Section: Model Detailsmentioning

confidence: 99%

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Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Bouchefra¹,

Sari²

2017

Transactions on Electrical and Electronic Materials

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This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound B x Ga (1-x) N and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions (B x Ga (1-x) N), at various temperatures for B 0.5 Ga 0.5 N. Monte carlo simulation, was employed and the three valleys of the conduction band (Γ, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in B x Ga (1-x) N alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

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Section: Bn Ganmentioning

confidence: 99%

Section: Acoustic Scatterings Ratesmentioning

confidence: 99%

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Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Bouchefra¹,

Sari²

2017

Transactions on Electrical and Electronic Materials

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“…The nonparabolic band approximation is employed for all three valleys, and the internal electric field due to the charge redistribution nonuniformity is considered with the Poisson equation [22] and updated in 5 fs time steps. Initially 100 electrons/nm are sampled, over up to 3 µm length (300,000 electrons).…”

Section: Monte Carlo Simulations Phonon Recycling and Net Po-tementioning

confidence: 99%

Toward reversing Joule heating with a phonon-absorbing heterobarrier

Shin

Kaviany

2015

Phys. Rev. B

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Using graded heterobarrier placed along an electron channel, phonons emitted in joule heating are recycled in-situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to GaAs:Al electron channel with graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and increases with temperature. The lateral momentum contributes to the transmission across the barrier, so partially non-conserving lateral momentum electron scattering (rough interface) can improve the efficiency.

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“…Self-consistent ensemble Monte Carlo (MC) simulates the electron transport and phonon absorption/emission in HPAB with large ensemble of sampled electrons coupling to the Poisson equation to reflect the internal charge redistribution [26][27][28]. The simulation includes acoustic, inter-and intravalley optical phonon scatterings in the lowest conduction band, and employs GaAs properties (effective mass m e,e , dielectric constants ǫ e,∞ and ǫ e,s , deformation potential φ ′ e-p , etc.)…”

Section: (B)mentioning

confidence: 99%

Heterobarrier for converting hot-phonon energy to electric potential

2013

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We show that hot phonons emitted in energy conversion or resistive processes can be converted to electric potential in heterobarrier structures. Using phonon and electron interaction kinetics and self-consistent ensemble Monte Carlo, we find the favorable conditions for unassisted absorption of hot phonons and design graded heterobarriers for their direct conversion into electric energy. Tandem barriers with nearly optical-phonon height allow for substantial potential gain without current loss. We find that 19% of hot phonons can be harvested with an optimized GaAs/Al x Ga 1−x As barrier structure over a range of current and electron densities, thus enhancing the overall energy conversion efficiency and reducing waste heat.

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Monte Carlo Simulation of Semiconductor Devices

Cited by 126 publications

References 0 publications

Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

Toward reversing Joule heating with a phonon-absorbing heterobarrier

Heterobarrier for converting hot-phonon energy to electric potential

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