2002
DOI: 10.1016/s0368-2048(01)00368-1
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Monte Carlo simulation of secondary electron emission from the insulator SiO2

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Cited by 114 publications
(79 citation statements)
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“…Various methods of surface analysis [1][2][3] are based on it as well as a number of materials processing techniques [4]. In these applications the electron energy is above 100 eV and backscattering and secondary electron emission, the physical processes involved, are sufficiently well understood [5][6][7][8][9][10][11][12]. The situation is different for electron-surface interaction at energies below 100 eV, as it occurs in dielectric barrier discharges [13][14][15], dusty plasmas [16][17][18][19][20], Hall thrusters [21,22], and electric probe measurements [23].…”
mentioning
confidence: 99%
“…Various methods of surface analysis [1][2][3] are based on it as well as a number of materials processing techniques [4]. In these applications the electron energy is above 100 eV and backscattering and secondary electron emission, the physical processes involved, are sufficiently well understood [5][6][7][8][9][10][11][12]. The situation is different for electron-surface interaction at energies below 100 eV, as it occurs in dielectric barrier discharges [13][14][15], dusty plasmas [16][17][18][19][20], Hall thrusters [21,22], and electric probe measurements [23].…”
mentioning
confidence: 99%
“…Other possibility is to follow particular products of each inelastic collision (Schreiber and Fitting, 2002;Kieft and Bosch, 2008). Corresponding scattering cross-sections can be derived using optical data for dispersion relations (including the acoustic deformation potential and longitudinal optical phonos properties for insulators).…”
Section: Discussionmentioning
confidence: 99%
“…Comparison of the results by the calibrated DDR model with the experimental data, 31 MonteCarlo simulations, 52 and the formula of Agarwal 51 for a silica sample is shown in Fig. 7 (right).…”
Section: -12mentioning
confidence: 99%