Abstract:In recent years, it has been under discussion how the distribution of discrete dopant ions affects the performance of electron devices. In particular, dopant ions near the interface may not be surrounded by a sufficient number of carriers to achieve full screening. In addition, the screening effect is modeled assuming equilibrium, which cannot be validated. Therefore, the device modeling of the screening effect must be refined to cover the entire range of applied voltages. In the present work, we adequately de… Show more
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