2015
DOI: 10.1134/s0021364015220075
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Monte Carlo simulation of multilayer magnetic structures and calculation of the magnetoresistance coefficient

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Cited by 26 publications
(19 citation statements)
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“…The electron densities with spin up and down can be expressed through the magnetization of film n ↑,↓ /n = (1 ± m)/2. The averaged electron velocity ⟨V ↑,↓ ⟩ can be expressed through an electron mobility and the external electric field intensity E, and after that through a probability of electron jump in unit time from i-cell to a neighbouring cell in the direction of electric field [2] with averaging over all film cells:…”
Section: Simulation Algorithm and Results Of Calculationsmentioning
confidence: 99%
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“…The electron densities with spin up and down can be expressed through the magnetization of film n ↑,↓ /n = (1 ± m)/2. The averaged electron velocity ⟨V ↑,↓ ⟩ can be expressed through an electron mobility and the external electric field intensity E, and after that through a probability of electron jump in unit time from i-cell to a neighbouring cell in the direction of electric field [2] with averaging over all film cells:…”
Section: Simulation Algorithm and Results Of Calculationsmentioning
confidence: 99%
“…The method was developed for the calculation of the magnetoresistance coefficient for multilayered structures in case of CPP-geometry [2].…”
Section: Simulation Algorithm and Results Of Calculationsmentioning
confidence: 99%
“…To this effect, the simulated structure was reduced to equilibrium state for times much greater than relaxation time. We have used in papers [25,26] for calculation of the CPP magnetoresistance the two-current Mott model to describe the resistance of different conduction channels [39]. It was introduced the resistance of an ferromagnetic film for two groups of electrons with spins up R ↑ and spin down R ↓ .…”
Section: Calculation Of Magnetoresistance In Magnetic Structure Co/cu/comentioning
confidence: 99%
“…The electron densities with spin up and down can be expressed through the magnetization of the film n n m 1 2 , =    ( ) determined in the process of the Monte Carlo simulation of magnetic properties of the structure. The averaged electron velocity V , á ñ   can be expressed through the electron mobility and the external electric field intensity E, and after that through the probability of electron displacement in unit time (corresponding to one Monte Carlo step per spin) from unit cell i to a neighbouring unit cell in the direction of the electric field with averaging over all film unit cells [25,26].…”
Section: Calculation Of Magnetoresistance In Magnetic Structure Co/cu/comentioning
confidence: 99%
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