Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies

Ciappa, Mauro; Ilgünsatiroglu, Emre; Illarionov, A. Yu.

doi:10.1016/j.microrel.2012.06.091

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…Moreover, any variation in the two-dimensional electric potential landscape due to a non-uniform surface charge distribution can result in patch fields outside a specimen 17 , 18 . SEs generated in semiconductor crystals that diffuse to the surface therefore either encounter a diffusion barrier or drift through sub-surface electric fields due to the surface depletion region and dipole layer before percolating through surface/interface boundaries that modify the trajectories of emission 13 , 19 , and may be further subjected to refraction by any patch fields after escaping the surface 13 , 20 . The SE signal intensifies if the doping-dependent field and scattering effects enhance the collection efficiency into the lens bore, and vice versa.…”

Section: Introductionmentioning

confidence: 99%

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Chee

2018

Sci Rep

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Recent advances in two-dimensional dopant profiling in the scanning electron microscope have enabled a high throughput, non-contact process diagnostics and failure analysis solution for integrated device manufacturing. The routine (electro)chemical etch processes to obtain contamination-free, hydrogen-terminated silicon surfaces is industrially important in ULSI microfabrication, though doping contrast, which is the basis for quantitative dopant profiling, will be strongly altered. We show herein that ammonium-fluoride treatment not only enabled doping contrast to be differentiated mainly by surface band-bending, but it enhanced the quality of linear quantitative calibration through simple univariate analysis for SE energies as low as 1 eV. Energy-filtering measurements reveal that the linear analytical model broached in the literature (c.f. Kazemian et al., 2006 and Kazemian et al., 2007) is likely to be inadequate to determine the surface potential across semiconductor p-n junctions without suitable deconvolution methods. Nevertheless, quantification trends suggest that energy-filtering may not be crucial if patch fields and contamination are absolutely suppressed by the appropriate edge termination and passivation.

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Section: Introductionmentioning

confidence: 99%

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Chee

2018

Sci Rep

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“…Dapor et al conducted a detailed study on the simulation methods for investigating the interactions between electrons and the semiconductor material Si [57]. Ciappa et al [58] and Khan et al [59] calculated the secondary electron yield of the semiconductor element Si, whereas Hussain et al calculated the electron yields for compound semiconductor materials, such as, GaAs, InAs, and PbS [60]. Studies on the interactions between electrons and insulating materials have been reported, such as investigations on elemental diamond [61], compound SiO 2 [62,63], and polymethyl methacrylate [64].…”

Section: Introductionmentioning

confidence: 99%

Linewidth characterization of a self-traceable grating by SEM

Guo,

Miao,

Mao

et al. 2024

J. Phys. D: Appl. Phys.

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In order to achieve high-precision nanometrology, a self-traceable grating reference material has been reported and prepared by atom lithography and soft X-ray interference techniques (J. Liu et al., Nanotechnology 32 (2021) 175301). In this work we employ a Monte Carlo simulation method to study the scanning electron microscopy (SEM) image contrast and linewidth characterization of the grating linewidth. The 3D structure of the mushroom-shaped grating line made of the multilayer (Pt, SiO2 and Si) is modeled according to the transmission electron microscopy (TEM) image, enabling the SEM linescan profiles of secondary electron signals to be obtained for different values of structural linewidth parameter from Monte Carlo simulations. In the light of the principle of the model-based library method a model database of Monte Carlo simulated SEM linescan profiles by varying the incident electron beam conditions and the grating linewidths is thus constructed; then the grating linewidth has been successfully characterized with experimental SEM image. By comparison with the TEM measurement, the measurement accuracy is verified to within 0.3% for the linewidth of ~25 nm.

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“…We first consider the SEY when the high-energy electrons of several keV impinge the Si layer. According to [87], the SEY of Si is below 0.2 for electron energies in the range of 3keV to 10 keV. We believe such a low value of SEY will not cause a significant change in our results.…”

Section: One-layer Modelmentioning

confidence: 64%

Planar helix-based slow-wave structures for millimeter wave traveling-wave tubes

Zhao¹

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Circular helix is a very popular slow-wave structure (SWS) for application in traveling-wave tubes (TWTs). But it is not easy to be fabricated using printed-circuit or microfabrication techniques which are important for low-cost fabrication and high frequency applications. In this context, during the last few years, a planar helix SWS with straight-edge connections (PH-SEC) has been proposed and studied. Unlike the circular helix, the PH-SEC is suitable to be fabricated using printed circuit or microfabrication techniques. However, there are still some issues and problems that need to be addressed for the PH-SEC when used in millimeter wave TWTs. First of all, there can be backward wave oscillations when the TWT is working at high voltages. Secondly, the size of the SWS, the electron beam tunnel, and the beam get very small, causing difficulty in fabrication, alignment, and focusing of the electron beam. Thirdly, at millimeter wave frequencies, it is more likely that the electrons hit the supporting dielectric, causing dielectric charging which will affect the performance of the TWT adversely. Moreover, PH-SEC can be dispersive in the presence of dielectric loading, reducing the bandwidth of operation. This thesis presents novel SWSs which are based on the PH-SEC and solve some of these problems. First of all, two types of coupled planar helices, an unconnected pair of PH-SECs and a coaxial pair of PH-SECs, are proposed. Their dispersion characteristics are derived from analysis based on field-theory. The characteristic equations and field expressions are obtained to explain the nature of different modes that propagate in the coupled structures. Coupling impedance is also calculated. Effects of variations in dimensions are studied. The analysis results match well with simulations. Simulation results are presented to show that the unconnected pair of planar helices has a reduced interaction with backward waves as compared to that for a corresponding single PH-SEC. Based on the above knowledge of various modes, an unconnected pair of PH-SECs has been designed together with a stripline power divider in order to provide input signals with equal magnitude and phase. Also proposed is a connected pair of PHvi SECs which can be fed in a much simpler way by a coplanar waveguide (CPW) feed. The latter structure offers a larger electron-beam tunnel and lower risk of backward wave oscillation compared to the single PH-SEC. Moreover, the connected pair of PH-SECs has a higher gain growth rate than that for the single PH-SEC. The connected pair also shows a significantly higher coupling impedance compared to a recently reported meander-line based SWS. Both the unconnected and the connected pair of PH-SECs have been designed and fabricated using printed circuit techniques. The measurement results match well with the simulation results.

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Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies

Cited by 6 publications

References 7 publications

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning

Linewidth characterization of a self-traceable grating by SEM

Planar helix-based slow-wave structures for millimeter wave traveling-wave tubes

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