Monte carlo simulation of charging effects in linewidth metrology (II): On insulator substrate

Ko, Yeong-Uk; Chung, Myung-Sae

doi:10.1002/sca.4950200803

Cited by 10 publications

(3 citation statements)

References 7 publications

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“…Bernstein et al [3] investigated the effect of SEII on the quality of SEM images of high resolution, and devised a method to reduce its influence. Ko & Chung [4] studied the effect of charge on the image quality of the insulating material under the electron beam.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Magnetic Field Direction on the Imaging Quality of Scanning Electron Microscope

Ai¹,

Bao²,

Hu³

et al. 2017

Journal of Magnetics

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The significant reduction of the image quality caused by the magnetic field of samples is a major problem affecting the application of SEM (scanning electron microscopy) in the analysis of electronic devices. The main reason for this is that the electron trajectory is deflected by the Lorentz force. The usual solution to this problem is degaussing the sample at high temperatures. However, due to the poor heat resistance of some electronic components, it is imperative to find a method that can reduce the impact of magnetic field on the image quality and is straightforward and easy to operate without destroying the sample. In this paper, the influence of different magnetic field directions on the imaging quality was discussed by combining the experiment and software simulation. The principle of the method was studied, and the best observation direction was obtained.

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Section: Introductionmentioning

confidence: 99%

The Effect of Magnetic Field Direction on the Imaging Quality of Scanning Electron Microscope

Ai¹,

Bao²,

Hu³

et al. 2017

Journal of Magnetics

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show abstract

“…These phenomena deteriorate the accuracy of the measurement in SEM and pattern formation in EB lithography. Although several studies have been carried out to examine these phenomena, [1][2][3][4][5][6][7][8][9][10][11][12][13] the mechanism is not yet completely understood. One of the difficulties in understanding charging arises from the dependence on the specimen geometry.…”

Section: Introductionmentioning

confidence: 99%

“…Numerical simulation is a useful tool to study this problem. [4][5][6][7][8][9][10][11][12][13] It can handle various kinds of samples just by programming their geometrical configuration. It can also provide the deposited charge distribution in insulating materials, which is difficult to measure experimentally.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Charging Phenomena of Polymer Films on Silicon Substrates under Electron Beam Irradiation

Yasuda

Morimoto

Kainuma

et al. 2008

jjap

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Charging phenomena of polymer films on silicon substrates under electron beam irradiation are studied by numerical simulation. The initial distribution of the charge deposited in the sample is calculated by a Monte Carlo simulation of electron scattering, and charge drift is simulated by taking into account the Poisson equation, the charge continuity equation, Ohm's law, and electron beam induced conductivity. The dependences of charging on electron energy and polymer thickness are explained by the secondary yield and the relationship between the electron range and polymer film thickness.

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Two‐dimensional simulation and modeling in scanning electron microscope imaging and metrology research

et al. 2002

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Summary:Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multiple landing positions. If the multiple landings lie on a line, the results can be graphed in a line scan-like format. Monte Carlo results formatted as line scans have proven useful in providing one-dimensional information about the sample (e.g., linewidth). When used this way, this process is called forward line scan modeling. In the present work, the concept of image simulation (or the first step in the inverse modeling of images) is introduced where the forward-modeled line scan data are carried one step further to construct theoretical two-dimensional (2-D) micrographs (i.e., theoretical SEM images) for comparison with similar experimentally obtained micrographs. This provides an ability to mimic and closely match theory and experiment using SEM images. Calculated and/or measured libraries of simulated images can be developed with this technique. The library concept will prove to be very useful in the determination of dimensional and other properties of simple structures, such as integrated circuit parts, where the shape of the features is preferably measured from a single top-down image or a line scan. This paper presents one approach to the generation of 2-D simulated images and presents some suggestions as to their application to critical dimension metrology.

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Monte carlo simulation of charging effects in linewidth metrology (II): On insulator substrate

Cited by 10 publications

References 7 publications

The Effect of Magnetic Field Direction on the Imaging Quality of Scanning Electron Microscope

The Effect of Magnetic Field Direction on the Imaging Quality of Scanning Electron Microscope

Analysis of Charging Phenomena of Polymer Films on Silicon Substrates under Electron Beam Irradiation

Two‐dimensional simulation and modeling in scanning electron microscope imaging and metrology research

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