Monte Carlo simulation of charge exchange processes in the scattering of 4keV He+ ions by an amorphous silicon surface

Khalal-Kouache, K.; Chami, A.C.; Boudjema, M.; Benazeth, C.

doi:10.1016/j.nimb.2006.12.085

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…Monte Carlo simulations [22] based on the TRIM-85 code (TRansport of Ions in Matter) [6] were performed for He + ions with incident energy of 2 and 10 keV and Ag foils. For each energy two thicknesses were considered (50 and 200 Å for 2 keV and 200 and 800 Å for 10 keV).…”

Section: Resultsmentioning

confidence: 99%

Multiple scattering of low energy ions in matter: Influence of energy loss and interaction potential

Mekhtiche¹,

Khalal-Kouache²

2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Resultsmentioning

confidence: 99%

Multiple scattering of low energy ions in matter: Influence of energy loss and interaction potential

Mekhtiche¹,

Khalal-Kouache²

2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…Monte Carlo approach shows more precise treatment of elastic scattering and it allows the determination of angular and energy distributions. The program TRIM is developed based on the Monte Carlo approach and describes multiple scattering of projectiles near the solid surface [2]. The results obtained acquired averaging over many simulated particle trajectories [1].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo study of alpha (α) particles transport in nanoscale gallium arsenide semiconductor materials

Amir

Chee

2012

AIP Conference Proceedings

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Space and ground level electronic equipment with semiconductor devices are always subjected to the deleterious effects by radiation. The study of ion-solid interaction can show the radiation effects of scattering and stopping of high speed atomic particles when passing through matter. This study had been of theoretical interest and of practical important in these recent years, driven by the need to control material properties at nanoscale. This paper is attempted to present the calculations of final 3D distribution of the ions and all kinetic phenomena associated with the ion's energy loss: target damage, sputtering, ionization, and phonon production of alpha (α) particle in Gallium Arsenide(GaAs) material. This calculation is being simulated using the Monte Carlo simulation, SRIM (Stopping and Range of Ions in Matter). The comparison of radiation tolerance between the conventional scale and nanoscale GaAs layer will be discussed as well. From the findings, it is observed that most of the damage formed in the GaAs layer induced by the production of lattice defects in the form of vacancies, defect clusters and dislocations. However, when the GaAs layer is scaled down (nanoscaling), it is found that the GaAs layer can withstand higher radiation energy, in term of displacement damage.

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Effect of energy loss in the simulation of slow ion scattering by a solid surface

Khalal-Kouache

Aissous

Mekhtiche

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Monte Carlo simulation of charge exchange processes in the scattering of 4keV He+ ions by an amorphous silicon surface

Cited by 3 publications

References 19 publications

Multiple scattering of low energy ions in matter: Influence of energy loss and interaction potential

Multiple scattering of low energy ions in matter: Influence of energy loss and interaction potential

Monte Carlo study of alpha (α) particles transport in nanoscale gallium arsenide semiconductor materials

Effect of energy loss in the simulation of slow ion scattering by a solid surface

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