Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

Donnarumma, Gesualdo; Wozny, Janusz; Lisik, Zbigniew

doi:10.1016/j.mseb.2009.01.027

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…The source and the drain are assumed to have ideal Ohmic contacts [9]. The lattice temperature is assumed to be T = 300 K. The analytical non-parabolic band model for the band structure of silicon is employed [9,10]. We considered the intravalley acoustic, intervalley phonon and ionized impurity scatterings in our simulation.…”

Section: Simulation Methodsmentioning

confidence: 99%

Theoretical study of Scattering of Electron Transport

Kumar¹,

Yadav²,

Dey³

2019

Jour. Atomic Mole. Conden. Nano Phys.

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The effect of the scattering-direction of hot electrons in the drain of ballistic n + -i-n + diodes is studied by a semi-classical Monte Carlo method. At low doping concentrations, the ionized impurity scattering has a weak influence on hot electron transport, although it is an elastic scattering. At sufficiently high doping concentrations on the other hand, the ionized impurity scattering enhances the backward flow of hot electrons, and severely degrades the peak of mean carrier-velocity in the channel and also the steady-state current. We argue that the scattering direction of hot electrons is the main reason behind these results.

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Section: Simulation Methodsmentioning

confidence: 99%

Theoretical study of Scattering of Electron Transport

Kumar¹,

Yadav²,

Dey³

2019

Jour. Atomic Mole. Conden. Nano Phys.

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“…9 for intervalley phonon scattering and the parameters shown in ref. 10 for intravalley acoustic phonon scattering. The electron concentration profile is calculated by the cloud-in-cell method and the potential profile is calculated by the finite difference method scheme of the Poisson equation.…”

Section: Simulation Methodsmentioning

confidence: 99%

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n⁺–i–n⁺ Diode

Abudukelimu¹,

Yasenjiang²,

Kakushima³

et al. 2011

Jpn. J. Appl. Phys.

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Ionized impurity scattering has a weak influence on hot electron transport at low doping concentrations owing to the fact that ionized impurity scattering is an anisotropic scattering with a high preference for forward scattering and most hot electrons are absorbed in the drain after undergoing ionized impurity scattering. On the other hand, ionized impurity scattering approaches isotropic characteristics at sufficiently high doping concentrations and enhances the scattering of hot electrons in the backward direction and severely degrades the peak of the mean velocity of electrons in the channel and the steady-state current. We conclude that the scattering direction is an important factor for hot electron transport in the drain region of semiconductor devices.

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Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

Wozny¹,

Lisik²,

Podgorski

2014

J. Phys.: Conf. Ser.

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Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

Cited by 5 publications

References 6 publications

Theoretical study of Scattering of Electron Transport

Theoretical study of Scattering of Electron Transport

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n⁺–i–n⁺ Diode

Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

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Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

Cited by 5 publications

References 6 publications

Theoretical study of Scattering of Electron Transport

Theoretical study of Scattering of Electron Transport

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+–i–n+ Diode

Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

Contact Info

Product

Resources

About

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n⁺–i–n⁺ Diode