Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x

Abstract

We report a Monte Carlo study of hole transport in AIXGa, -,As, In, -,Al~,As, and GaAs,Sbr --x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data. 0 1995 American Institute of Physics.

High electric field transport in GaAs0.51Sb0.49

“…Here, we will study the high field velocity of the carriers, their energy and repopulation of various valleys, and the impact ionization behavior. At low fields, a hole mobility of 500 cm 2 V −1 s −1 is found, which is comparable to that found previously [14]. On the other hand, the electron mobility found for moderate doping is about 20 000 cm 2 V −1 s −1 , which is considerably higher than the previous value reported [13].…”

“…It has also been suggested as a collector in third generation hot carrier solar cells [12]. While the transport properties are not well-known, the electron [13] and hole mobilities [14] have been calculated, both with ensemble Monte Carlo techniques [15,16].…”

Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors

“…Material parameters employed in our numerical simulation model are based on published experimental parameters. [14][15][16][17] Table I shows the parameter values used in the numerical simulation. 18 To obtain a good qualitative agreement between the results obtained from numerical simulation and those obtained from the experimental measurement, a band gap smaller than what is typically reported for the InAlAs layer was utilized.…”