Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

Shomali, Zahra; Pedar, Behrad; Ghazanfarian, Jafar; Abbassi, Abbas

doi:10.1016/j.ijthermalsci.2016.12.014

Cited by 32 publications

(10 citation statements)

References 46 publications

(50 reference statements)

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“…As a phonon scatters, its frequency, branch and direction will be re-sampled from the cumulative density function [31]. Here, the time step, ∆t is chosen to be smaller than the minimum scattering rate of the phonons which are sampled during the simulation.…”

Section: D Materials Graphene Blue Phosphorene Germanenementioning

confidence: 99%

“…The value of the self-heating source is assumed to be Q=2.5×10 12 W/m 3 . All boundaries of the investigated new low-dimensional materials are assumed to be adiabatic except the bottom boundaries which can exchange the energy with the environment [31,32]. Consequently, the temperature at these boundaries are set to the ambient temperature.…”

Section: Geometry and Boundary Conditionsmentioning

confidence: 99%

“…5 and 6, subsequently, demonstrate the results and the conclusions. [31,32]. Consequently, the temperature at these boundaries are set to the ambient temperature.…”

Section: Introductionmentioning

confidence: 99%

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Effects of low-dimensional material channels on energy consumption of nano-devices

Shomali

Asgari

2018

International Communications in Heat and Mass Transfer

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It is commonly believed that the significant energy saving advantages are belonged to the logic circuits which operate at low temperature as less enegy is needed for cooling them to the treshold temperature after operation. Also, nanoscale thermal management, efficient energy usage in nanoscale and especially thermal optimization are the most challenging issues, while dealing with the new generation of transistors as the miniaturizing unlimitedly the silicon channels of the transistors has resulted in an increase in the energy consumption of computers and the leakage currents. In this paper, the non-Fourier thermal attitudes of well-known two-dimensional crystalline materials of graphene, blue phosphorene, germanene, silicene and MoS 2 as the silicon channels replacements are studied by using the phonon Monte-Carlo method. We show that graphene and blue phosphorene have the least maximum temperature, representer of the reliability of the transistors, among the all five investigated nano-channels during the Monte-Cralo simulation. The established hotspots of these two materials are always cooler, not reaching the temperature threshold level, and they lose the heat much faster as the heat generation zone is switched off. The obtained results considered along Preprint submitted to International communication in heat and mass transferNovember 9, 2018 arXiv:1803.03427v2 [cond-mat.mes-hall] 20 Apr 2018 with the electrical disadvantages of the graphene layer, suggests the blue phosphorene as the more thermally appropriate and optimal choice for the silicon channel replacement in new designed field effect transistors. That is to say that the limit of the energy and economic cost of the producing the advanced blue phosphorene chips meets the value of the product for the computing enterprise.

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Section: D Materials Graphene Blue Phosphorene Germanenementioning

confidence: 99%

Section: Geometry and Boundary Conditionsmentioning

confidence: 99%

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Effects of low-dimensional material channels on energy consumption of nano-devices

Shomali

Asgari

2018

International Communications in Heat and Mass Transfer

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“…The BE has been widely used in a range of fields spanning from gasses, plasma, and semiconductor's physics (we focus here specifically on the time-dependent equation) [43][44][45][46][47][48][49][50]. The transport part has a similar shape in all those fields, with the only notable exception that in solid state applications, the particle's dispersion is not anymore a quadratic function of the momentum, but is in general much more complicated and often an analytic form is not known.…”

Section: Introductionmentioning

confidence: 99%

Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping

Wadgaonkar,

Jain,

Battiato

2020

Preprint

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Study of far-from-equilibrium thermalization dynamics in quantum materials, including the dynamics of different types of quasiparticles, is becoming increasingly crucial. However, the inherent complexity of either the full quantum mechanical treatment or the solution of the scattering integral in the Boltzmann approach, has significantly limited the progress in this domain. In our previous work we had developed a solver to calculate the scattering integral in the Boltzmann equation. The solver is free of any approximation (no linearisation of the scattering operator, no close-toequilibrium approximation, full non-analytic dispersions, full account of Pauli factors, and no limit to low order scattering) [1]. Here we extend it to achieve a higher order momentum space convergence by extending to second degree basis functions. We further use an adaptive time stepper, achieving a significant improvement in the numerical performance. Moreover we show adaptive time stepping can prevent intrinsic instabilities in the time propagation of the Boltzmann scattering operator. This work makes the numerical time propagation of the full Boltzmann scattering operator efficient, stable and minimally reliant on human supervision.

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“…Harada et al [24] applied the semi-classical MC method to silicon and monolayer graphene devices, and compared the differences in electron transport properties that arise due to the linear band dispersion of graphene. Shomali et al [25] performed energy carrier transport simulations using the MC method to investigate the effects of boundary conditions on the temperature distribution profiles and localized hotspots in silicon nanodevices. Fang et al [26] demonstrated the contribution of both acoustic and optical phonon emission to the energy loss in silicon and germanium devices through full-band MC simulations.…”

Section: Introductionmentioning

confidence: 99%

A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices

2020

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The current electronics industry has used the aggressive miniaturization of solid-state devices to meet future technological demands. The downscaling of characteristic device dimensions into the sub-10 nm regime causes them to fall below the electron–phonon scattering length, thereby resulting in a transition from quasi-ballistic to ballistic carrier transport. In this study, a well-established Monte Carlo model is employed to systematically investigate the effects of various parameters such as applied voltage, channel length, electrode lengths, electrode doping and initial temperature on the performance of nanoscale silicon devices. Interestingly, from the obtained results, the short channel devices are found to exhibit smaller heat generation, with a 2 nm channel device having roughly two-thirds the heat generation rate observed in an 8 nm channel device, which is attributed to reduced carrier scattering in the ballistic transport regime. Furthermore, the drain contacts of the devices are identified as critical design areas to ensure safe and efficient performance. The heat generation rate is observed to increase linearly with an increase in the applied electric field strength but does not change significantly with an increase in the initial temperature, despite a marked reduction in the electric current flowing through the device.

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Monte-Carlo parallel simulation of phonon transport for 3D silicon nano-devices

Cited by 32 publications

References 46 publications

Effects of low-dimensional material channels on energy consumption of nano-devices

Effects of low-dimensional material channels on energy consumption of nano-devices

Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping

A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices

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