2014 44th European Solid State Device Research Conference (ESSDERC) 2014
DOI: 10.1109/essderc.2014.6948834
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Monte Carlo modeling of the extraction of roughness parameters at nanometer scale by Critical Dimension Scanning Electron Microscopy

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Cited by 2 publications
(3 citation statements)
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“…Because of the relevant implications for SEM-based metrology, this issue deserves a deeper investigation. A quantitative study of this aspect is presented in [10]. …”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Because of the relevant implications for SEM-based metrology, this issue deserves a deeper investigation. A quantitative study of this aspect is presented in [10]. …”
Section: Discussionmentioning
confidence: 99%
“…This fact has a great impact on the quantitative extraction of the line roughness parameters by SEM. This relevant issue is investigated quantitatively in [10]. The bottom width along the central line as extracted by CA is shown in Fig.…”
Section: Simulation and CD Extractionmentioning
confidence: 99%
“…Monte Carlo simulations have been widely used in the reliability assessment of power electronics systems [10]. The method also finds its use in optical interconnect system under various fabrication and assembly errors [11] and even in addressing main challenges for the metrology of critical dimensions in nanostructures [12]. As we can observed, there are several industry applications of Monte Carlo such as analyzing the effects of geometric deviations on t performance of magnetic gears [13].…”
Section: Fig 5 Assembly Tolerance Analysis By Monte Carlo Simulationmentioning
confidence: 99%