Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0.53Ga0.47As

Millithaler, J.‐F.; Reggiani, L.; Pousset, J.; Varani, L.; Palermo, C.; Knap, W.; Matéos, J.; González, T.; Pérez, S.; Pardo, D.

doi:10.1063/1.2837183

Cited by 21 publications

(15 citation statements)

References 10 publications

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“…Accordingly, the random motion of free carriers is responsible of voltage fluctuations inside the channel and the presence of a dielectric discontinuity at the interface of a modulation of the plasma frequency with respect to its 3D value. The analogous case of an ungated structure was already considered in a previous publication 6,7 and it can be a valuable source of comparison with present findings. In the GCA, the plasma frequency f p can be also conveniently expressed as…”

Section: Monte Carlo Investigation Of Terahertz Plasma Oscillations Imentioning

confidence: 80%

Monte Carlo investigation of terahertz plasma oscillations in gated ultrathin channel of n-InGaAs

Millithaler¹,

Pousset²,

Reggiani³

et al. 2009

Applied Physics Letters

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By numerical simulations we investigate the dispersion of the plasma frequency in a gated channel of n-type InGaAs layer of thickness W and submicron length L at T=300 K. In the presence of a source-drain voltage and for a carrier concentrations of 1018 cm−3 the spectra evidences a peaked shape with two main bumps, the former at high frequency corresponding to the three-dimensional plasma frequency and the latter at a low frequency. The frequency value of the latter peak exhibits a dispersion as the inverse of the channel length in agreement with the predictions of gradual channel approximation. At increasing drain voltages the instabilities associated with the presence of Gunn domains are responsible for a suppression of the plasma peak in favor of the onset of a peak in the subterahertz domain associated with transit time effects.

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Section: Monte Carlo Investigation Of Terahertz Plasma Oscillations Imentioning

confidence: 80%

Monte Carlo investigation of terahertz plasma oscillations in gated ultrathin channel of n-InGaAs

Millithaler¹,

Pousset²,

Reggiani³

et al. 2009

Applied Physics Letters

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“…Previous work [5][6][7][8] has already shown the exploration of the THz generation and detection based on field-effect transistors (FETs) theoretically or experimentally. THz plasma oscillations based on the FET have been investigated with Monte Carlo (MC) method [9][10][11]. TCAD modeling and simulation of Silicon transistor for THz detection have been reported in [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo investigation of Silicon MOSFET for terahertz detection

Wang

Liu

2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimensional (2D) ensemble Monte Carlo (MC) simulation study. The analytical model of responsivity to high frequency small signals based on the small-signal equivalent circuit of MOSFETs operating in terahertz detection mode are developed and calibrated. We explore the impacts of input excitation signals with different frequency and amplitude on THz detection. Moreover, it is shown that the responsivity to THz excitations could be controlled by modulation of the gate voltage and the gate length in the MOSFET.

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“…The electron velocity fluctuations of hot electrons, moving inside semiconductors structures owing to static or oscillating voltages, have been extensively investigated during recent decades as the growing miniaturization process of microelectronic components causes charge carriers to be driven by increasingly intense electric fields and exhibit a highly nonlinear response [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Noise-induced resonance-like phenomena in InP crystals embedded in fluctuating electric fields

Adorno¹,

Pizzolato²,

Spagnolo³

2016

J. Stat. Mech.

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We explore and discuss the complex electron dynamics inside a lowdoped n-type InP bulk embedded in a sub-THz electric field, fluctuating for the superimposition of an external source of Gaussian correlated noise. The results presented in this study derive from numerical simulations obtained by means of a multi-valley Monte Carlo approach to simulate the nonlinear transport of electrons inside the semiconductor crystal. The electronic noise characteristics are statistically investigated by calculating the correlation function of the velocity fluctuations, its spectral density and the integrated spectral density, i.e. the total noise power, for dierent values of both amplitude and frequency of the driving oscillating electric field and for dierent correlation times of the field fluctuations. Our results show that the nonlinear response of electrons is strongly aected by the field fluctuations. In particular, crucially depending on the relationship between the correlation times of the external Gaussian noise and the timescales of complex phenomena involved in the electron dynamical behavior: (i) electrons self-organize among dierent valleys, giving rise to intrinsic noise suppression; (ii) this cooperative behavior causes the appearance of a resonance-like phenomenon in the noise spectra.

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Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0.53Ga0.47As

Cited by 21 publications

References 10 publications

Monte Carlo investigation of terahertz plasma oscillations in gated ultrathin channel of n-InGaAs

Monte Carlo investigation of terahertz plasma oscillations in gated ultrathin channel of n-InGaAs

Monte Carlo investigation of Silicon MOSFET for terahertz detection

Noise-induced resonance-like phenomena in InP crystals embedded in fluctuating electric fields

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