Monte Carlo determination of electron transport properties in gallium arsenide

Fawcett, W. Ronald; Boardman, A. D.; Swain, S.

doi:10.1016/0022-3697(70)90001-6

Cited by 845 publications

(159 citation statements)

References 41 publications

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“…We ignored the impurity scattering in the quantum well, since the channel is not considerably doped. The scattering rates for 3D electrons are the same as those given by Fawcett et al 27 Velocity-field characteristics for Ga 0.51 In 0.49 P/ In x Ga 1Ϫx As/GaAs modulation doped heterostructures with different channel In mole fractions (x) are shown in Fig. 4.…”

Section: Effects Of Screening On Transport Propertiesmentioning

confidence: 94%

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

Besikci

Bakir

Tanatar

2000

Journal of Applied Physics

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0.51 In 0.49 P/In x Ga 1Ϫx As/GaAs (xϭ0, 0.15, and 0.25͒ modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The calculated scattering rates are compared in order to see the effects of screening on the inter-and intra-subband scattering. Screening significantly lowers the intra-subband polar optical phonon scattering rates in both lattice matched and pseudomorphic structures. This results in a considerable lowering of the critical electric field beyond which negative differential resistance is seen. Screening also modifies the dependence of transport properties on the quantum well parameters. The results of the ensemble Monte Carlo simulations of high electron mobility transistors show that the performance of the device is considerably underestimated, if screening is not included in the calculation of the polar optical phonon scattering rates.

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Section: Effects Of Screening On Transport Propertiesmentioning

confidence: 94%

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

Besikci

Bakir

Tanatar

2000

Journal of Applied Physics

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“…The procedure is similar to what is used for high-field transport Monte Carlo simulations in semiconductors. 4 In order to simulate an infinite, macroscopically homogeneous, system the cube is repeated periodically. The simulation is performed independently for all electrons and their displacement (xl, x2, xa) from the initial position os recorded at fixed time intervals At up to a total time T. From the simulation < xi > shows a linear dependence upon time, t, as predicted by the diffusion theory, and the diffusion constant along a direction xi is then obtained by means of the equation…”

Section: Transportmentioning

confidence: 99%

A simulative approach to electron conduction in thick-film resistors

1983

Microelectronics Reliability

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A simulative approach to the calculation of electrical transport in thick-film resistors is presented, in which electrons are considered to hop from and to metallic grains and localized states in the glass.For concentrations of metallic grains sufficiently low and of localized states sufficiently high, a maximum in conductivity as a function of temperature is obtained due to a balance between the tendency of temperature to favour hopping and to oppose an ordered response to an external force.

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“…1). Of central importance is the fact that, were it not for the comparative inefficiency of the scattering mechanisms in the central valley in removing energy from the electrons present, the transferred electron effect would be nowhere near so obvious in GaAs as it is (Fawcett et al 1970). A second helpful property of GaAs is tnat crystals of the material can be grown semi-insulating (~10 8 Q cm), thereby making available to the device engineer a nominally nonconducting substrate upon which useful devices can be built from doped layers, grown either by epitaxy or by annealed ion implantation (Rees 1980).…”

Section: Introductionmentioning

confidence: 99%

Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching

Ladbrooke¹,

Debuf²,

Nanayakkara³

et al. 1982

Aust. J. Phys.

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A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented.

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Monte Carlo determination of electron transport properties in gallium arsenide

Cited by 845 publications

References 41 publications

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

A simulative approach to electron conduction in thick-film resistors

Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching

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