Monolithically integrated optical interference and absorption filters on thin film amorphous silicon photosensors for biological detection

Nikolaidou, Katerina; Condelipes, Pedro G. M.; Caneira, Catarina R.F.; Krack, Maximilian; Fontes, Pedro Mendes; Oliveira, Hugo M.; Kovačič, Milan; Krč, Janez; Topič, Marko; Cardoso, S.; Chu, V.

doi:10.1016/j.snb.2021.131330

Cited by 8 publications

(4 citation statements)

References 40 publications

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“…Taking into account that the a-Si:H p-i-n structure has been extensively used as photodiode and temperature sensors in lab-on-chip systems for biomolecular recognition [22][23][24][25] and DNA amplification [26,27] the presented results open the possibility to integrate a thin film electronic amplifier of sensor signal on the same glass substrate.…”

Section: Tablementioning

confidence: 98%

Analytical model of the drain current in amorphous silicon junction field effect transistors

Caputo

Lovecchio

Laurenzio

et al. 2022

Current Applied Physics

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Section: Tablementioning

confidence: 98%

Analytical model of the drain current in amorphous silicon junction field effect transistors

Caputo

Lovecchio

Laurenzio

et al. 2022

Current Applied Physics

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“…[ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. Among other applications, such coatings could be used as optical interference filter material in lab-on-chip for targeted biological sensors [ 16 ]. HfO 2 has been proposed as an environmentally protective and reflectivity-enhancing coating for aluminum micromirrors [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

Hardness, Modulus, and Refractive Index of Plasma-Assisted Atomic-Layer-Deposited Hafnium Oxide Thin Films Doped with Aluminum Oxide

et al. 2023

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Coatings with tunable refractive index and high mechanical resilience are useful in optical systems. In this work, thin films of HfO2 doped with Al2O3 were deposited on silicon at 300 °C by using plasma-enhanced atomic layer deposition (PE-ALD). The mainly amorphous 60–80 nm thick films consisted Al in the range of 2 to 26 at. %. The refractive indexes varied from 1.69 to 2.08 at the wavelength of 632 nm, and they consistently depended on the composition. The differences were higher in the UV spectral region. At the same time, the hardness of the films was from 12–15 GPa; the modulus was in the range of 160–180 GPa; and the mechanical properties did not have a good correlation with the deposited compositions. The deposition conditions, element contents, and refractive indexes at respective wavelengths were correlated. The results indicated that it is possible to tune optical properties and retain mechanical properties of atomic layer-deposited thin films of HfO2 with Al2O3 as doping oxide. Such films could be used as mechanically resilient and optically tunable coatings in, for instance, micro- or nano-electromechanical systems or transparent displays.

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“…Thin films' (TF) optical characteristics are crucial to fundamental and applied science. Mirror coating [1], interference filters [2], absorption filters [3], anti-reflection coating [4], and protective coatings [5] to prevent oxidation or abrasion of optical surfaces are examples of how TFs have been instigated in optical devices. TFs have also been used to legalize the temperatures of objects in space and as optical and thermal detectors [6].…”

Section: Introductionmentioning

confidence: 99%

Optical Characterization of Semiconducting Thin Films Using UV-VIS-NIR Spectroscopy: A Review

Dhruv,

Sharko,

Solanki

et al. 2023

SSP

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The review article focuses on the growth of thin film and its characterization by UV-Vis-NIR spectroscopy. For UV-Vis-NIR spectroscopy of thin films, they are usually deposited on translucent quartz glass surfaces. The article reports the extraction of various thin film optical parameters viz., absorption coefficient (α), Urbach energy (Eu), optical band gap (Eg), refractive index (n), extinction coefficient (k), dielectric constants, dissipation factor (tanδ) and optical conductivity (σoptical) by using optical spectra (absorption(A)/transmittance (T)/reflectance (R)). Furthermore, the effect of thin film substrate temperature (Ts) and/or thickness (d) and/or post-deposition annealing temperature (Ta) on various optical parameters is discussed in detail.

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Monolithically integrated optical interference and absorption filters on thin film amorphous silicon photosensors for biological detection

Cited by 8 publications

References 40 publications

Analytical model of the drain current in amorphous silicon junction field effect transistors

Analytical model of the drain current in amorphous silicon junction field effect transistors

Hardness, Modulus, and Refractive Index of Plasma-Assisted Atomic-Layer-Deposited Hafnium Oxide Thin Films Doped with Aluminum Oxide

Optical Characterization of Semiconducting Thin Films Using UV-VIS-NIR Spectroscopy: A Review

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