Monolithically Integrated DFB Lasers for Tunable and Narrow Linewidth Millimeter-Wave Generation

Abstract

A monolithic optoelectronic device for the generation of tunable and narrow linewidth millimeter-wave signals is presented. The device consists of three mutually injected distributed feedback lasers whose emission frequencies are stabilized via a four-wave mixing process. Their beating on a high-speed photodetector generates a narrow linewidth electrical signal that is continuously tunable over several tens of gigahertz.

Operating regimes of a controlled dual‐wavelength semiconductor laser system through four‐wave mixing‐ mediated by injection‐locking

“…In the device demonstrated by Zanola et al, two DFB lasers, with frequencies of ν 1 and ν 2 , respectively, are injected into laser 3, emitting at the frequency of ν 3 . Lasers 1 and 2 are subsequently locked through mutual injection, mediated by the process of FWM, which takes place within the third laser [3]. This is illustrated in Fig.…”

“…Using this method could lead to a potential means of efficiently generating terahertz (THz) radiation within the so-called 'THz gap' (100 GHz to 10 THz) [1,2]. THz and millimetre wave (mm-waves) technologies, which are able to emit efficiently within the THz gap, have grown substantially over recent years due to the advancements which have been made in developing sources and detectors which have the ability to emit within this frequency range [3][4][5][6][7]. Applications include gas sensing using THz time-domain spectroscopy [4,5] and T-ray imaging [6].…”

“…In an experimental paper by Zanola et al [3], the generation of tunable and narrow linewidth mm-wave signals is demonstrated utilising a semiconductor monolithic device. The device was based on the novel scheme of photomixing assisted by mutual injection locking through FWM.…”

“…This work will make a detailed study of the different behaviours of two lasers, utilising FWM mediated by injection locking in a third laser, paying particular attention to the different behaviours of the system observed within the different locking regions [1], but examining a broader range of parameter values than those considered experimentally by Zanola et al [3], with a view to exploring and optimising the efficiency of the system while operating under the locked condition.…”

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper)

“…We anticipate integrated semiconductor laser systems at <1% of the cost and <0.1% of the volume as compared to conventional laser systems for atom interferometry and general laser cooling. The integrated laser system development relies on high yield achieved at GGN, their expertise in integrated systems at telecoms wavelength 1 , narrow linewidth DFB lasers 2 as well as their experience of 700 to 900nm lasers 3 . Systems will be made commercially available via our industry partners.…”