Monolithically integrated coplanar 75‐GHz silicon impatt oscillator

Luy, J.-F.; Strohm, K.M.; Buechler, J.

doi:10.1002/mop.4650010402

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B Oscillators1

Impatt Diodes1

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1998

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Cited by 16 publications

(2 citation statements)

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“…Several coplanar oscillator designs have already been discussed [51], [52]. In the slot-line oscillator, the coplanar IMPATT diode is connected to the center of a slot line [52].…”

Section: B Oscillatorsmentioning

confidence: 99%

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Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

115

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Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon-and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.Index Terms-Millimeter-wave IC, silicon-based RF circuits.

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“…Several coplanar oscillator designs have already been discussed [51], [52]. In the slot-line oscillator, the coplanar IMPATT diode is connected to the center of a slot line [52].…”

Section: B Oscillatorsmentioning

confidence: 99%

“…For monolithic integration of IMPATT diodes, a coplanar device structure is advantageous [51], [52]. Fig.…”

Section: Impatt Diodesmentioning

confidence: 99%