Monolithically integrated active components: a quantum-well intermixing approach

On‐Chip Integration of Functional Hybrid Materials and Components in Nanophotonics and Optoelectronics

“…To address these problems, monolithic integration may provide possible solutions [1] . For example, using the on -chip integration method, device -to -device coupling problem can be completely eliminated, conveniently leading to a signifi cant decrease in packaging costs and sizes.…”

Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

“…In this paper, we have investigated a fabrication procedure of a multi-bandgap III-V-OI wafer for active/passive integration on III-V CMOS photonics platform by using quantum well intermixing (QWI) [7]. The implant enhanced interdiffusion (IEI) method [7], which relies on the diffusion of point defects created during ion implantation, induces blue shift in bandgap energy of multiquantum well (MQW), enabling a multi-bandgap III-V-OI wafer.…”

“…The implant enhanced interdiffusion (IEI) method [7], which relies on the diffusion of point defects created during ion implantation, induces blue shift in bandgap energy of multiquantum well (MQW), enabling a multi-bandgap III-V-OI wafer.…”

Effect of SiO2–metal–SiO2 plasmonic structures on InGaAs/GaAs quantum well intermixing

“…Various methods have been studied to control the QW intermixing in GaAs and InPbased QW structures [14][15][16]. Among them, impurity-free vacancy-enhanced disordering (IFVD) has been proved to be a simple and effective method on InGaAs/GaAs QW intermixing with minor side effects on the crystal quality and optical performance.…”