Monolithic transimpedance amplifiers for low-cost wideband optical links

Bastida, E.M.; Corso, Valentino; Finardi, C.A.; Fischer, R.A.; Patiri, V.

doi:10.1049/el:19970330

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…We made use of the well know inductor peaking technique [3][4][5][6][32][33][34][35][36][37]]. An amplifier with bandwidth even more wide with small size and low power consumption is presented.…”

Section: Darlington Ultra Wide Band Mm-wave Feedback Lna With Single mentioning

confidence: 99%

“…Successful efforts in this direction were made, in the past, by various components of our RF research team, by using relatively expensive III-V technologies, which take advantage from semi-insulating substrates for synthesizing on chip high Q passive circuit elements [1][2][3][4][5][6]. However, in spite of the design problems posed by the use of lossy Si substrates [7], the recent impressive advances of the high frequency performances of SiGe HBTs have disclosed much interesting perspectives for producing low cost microwave and mm-wave monolithic circuits with the additional attractive capability of a very high level mixed signal integration.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

SiGe HBT mm-Wave DC Coupled Ultra-wide-band Low Noise Monolithic Amplifiers

Ponchet

Bastida

Panepucci

et al. 2014

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design

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Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S 21 =11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ transimpedance gain, 37 GHz bandwidth, consumes 59 mW power and its area is 0.23 mm 2 . The 100 Gbps TIA has 43 dBΩ transimpedance gain, 79.4 GHz bandwidth, consumes 37 mW power and its area is only 0.05 mm 2 . These amplifiers are implemented in a 0.12 µm SiGe HBT technology (f T = 350 GHz/f max = 450 GHz). Output eye diagram plots were obtained to verify their performances.

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