Monolithic silicon smart tactile image sensor with integrated strain sensor array on pneumatically swollen single-diaphragm structure

Takao, Hidekuni; Sawada, Kazuaki; Ishida, M.

doi:10.1109/ted.2006.872698

Cited by 62 publications

(52 citation statements)

References 17 publications

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“…Nonetheless, this configuration provides higher output robustness to gain mismatches between different devices on the array. The sensitivity of POSFET device is 102.4 mV/N (Fig 3), which is more than twice the value reported earlier [2,3].…”

Section: Resultssupporting

confidence: 65%

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POSFET tactile sensing arrays using CMOS technology

Dahiya

Adami

Collini

et al. 2013

Sensors and Actuators A: Physical

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This work presents fabrication and evaluation of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. In the newer version presented here, the tactile sensing chip has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 x 4 POSFET touch sensing devices (or taxels) and both, the individual taxels and the array are designed to match spatiotemporal performance of the human fingertips. To detect contact events, the taxels utilize the contact forces induced change in the polarization level of piezoelectric polymer (and hence change in the induced channel current of MOS). The POSFET device on the chip have linear response in the tested dynamic contact forces range of 0.01-3 N and the sensitivity (without amplification) is 102.4 mV/N.

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Section: Resultssupporting

confidence: 65%

“…electronics have been explored [3]. MEMS based sensors are quite sensitive, with their usage limited to applications where strength of the contact forces (to be measured) is very small.…”

Section: Introductionmentioning

confidence: 99%

POSFET tactile sensing arrays using CMOS technology

Dahiya

Adami

Collini

et al. 2013

Sensors and Actuators A: Physical

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show abstract

“…It has been confirmed that the maximum input force range can be controlled from 21 mN to 176 mN by changing the backside pressure from 5 to 64 kPa using the same device (Takao et al, 2006). Even if adaptive control of the pressure is not necessary, sensing characteristics can be chosen or optimized by selecting the sealing pressure suitably for the estimated range of input force in the application.…”

Section: Ability Of Characteristic Controlmentioning

confidence: 95%

“…Voltage of the output line is determined as a partial voltage of R PR and R poly since M2 is turned on in this case. The output voltage of pixel (V Pix_Out ) fed to the common amplifier in the following stage is expressed by the next equation (Takao et al, 2006);…”

Section: Design Of Piezoresistor Pixel Circuit On Diaphragmmentioning

confidence: 99%

“…where R Amp is equivalent input impedance of the common amplifier (dashed line in the figure), and R M1 and R M2 are on-channel resistances of M1 and M2, respectively (Takao et al, 2006). In this situation, M1 and M2 are operating in non-saturation region at gate voltage of V dd , and its channel resistance is much lower than the other resistances (i.e.…”

Section: Design Of Piezoresistor Pixel Circuit On Diaphragmmentioning

confidence: 99%

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Three-Dimensional Silicon Smart Tactile Imager Using Large Deformation of Swollen Diaphragm with Integrated Piezoresistor Pixel Circuits

Takao¹,

Ishida²

2008

Sensors: Focus on Tactile Force and Stress Sensors

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Tastsysteme mit künstlichem Tastsinn wie beim menschlichen Finger

Maheshwari

Saraf

2008

Angewandte Chemie

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Dank unseres Tastsinns können wir die Oberflächentextur und Form von Gegenständen erkennen und Objekte ergreifen. Für die Herstellung einer elektronischen Haut, die für humanoide Roboter oder für die minimal‐invasive und ferngesteuerte Chirurgie den Tastsinn bereitstellen soll, müssen sowohl die (passiven) mechanischen Eigenschaften der Dermis als auch die charakteristischen Merkmale ihres Fühlmechanismus, besonders die digitale Funktion der Neuronen, nachgebildet werden. Dank des Einsatzes verschiedener Materialien und physikalischer Konzepte sind zwar erhebliche Fortschritte bei der Entwicklung einer elektronischen Haut zu verzeichnen, die Nachbildung des Tastsinns ist aber nach wie vor eine anspruchsvolle Aufgabe. Vor kurzem wurde ein Nanosystem entwickelt, das eine ähnliche Tastauflösung wie ein menschlicher Finger aufweist; verglichen mit anderen Systemen mit einer Kontaktfläche von über 1 cm2 ist dies eine Verbesserung um mehr als eine Größenordnung. Das neue System mit seinen robusten mechanischen Eigenschaften ist daher ein wichtiger Schritt hin zur Realisierung eines künstlichen Tastsinns.

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Monolithic silicon smart tactile image sensor with integrated strain sensor array on pneumatically swollen single-diaphragm structure

Cited by 62 publications

References 17 publications

POSFET tactile sensing arrays using CMOS technology

POSFET tactile sensing arrays using CMOS technology

Three-Dimensional Silicon Smart Tactile Imager Using Large Deformation of Swollen Diaphragm with Integrated Piezoresistor Pixel Circuits

Tastsysteme mit künstlichem Tastsinn wie beim menschlichen Finger

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