Monolithic Silicon Light Sources

Fauchet, Philippe M.

doi:10.1007/978-3-540-39913-1_5

Cited by 17 publications

(10 citation statements)

References 63 publications

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“…The large β ensures that the emitted light is efficiently coupled into waveguide modes. β iso = γ ⊥,guided + 2γ ||,guide γ ⊥,total + 2γ ||,total (6).…”

Section: Planar (2d) Silicon Slot Waveguidesmentioning

confidence: 99%

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Broadband enhancement of light emission in silicon slot waveguides

Jun¹,

Briggs²,

Atwater³

et al. 2009

Opt. Express

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Abstract:We investigate the light emission properties of electrical dipole emitters inside 2-dimensional (2D) and 3-dimensional (3D) silicon slot waveguides and evaluate the spontaneous emission enhancement (F p ) and waveguide coupling ratio (β). Under realistic conditions, we find that greater than 10-fold enhancement in F p can be achieved, together with a β as large as 0.95. In contrast to the case of high Q optical resonators, such performance enhancements are obtained over a broad wavelength region, which can cover the entire emission spectrum of popular optical dopants such as Er. The enhanced luminescence efficiency and the strong coupling into a limited set of well-defined waveguide modes enables a new class of power-efficient, CMOS-compatible, waveguide-based light sources. 2009 Optical Society of America

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“…The large β ensures that the emitted light is efficiently coupled into waveguide modes. β iso = γ ⊥,guided + 2γ ||,guide γ ⊥,total + 2γ ||,total (6).…”

Section: Planar (2d) Silicon Slot Waveguidesmentioning

confidence: 99%

“…Silicon has been the material of choice for the electronics industry, but it is an inefficient light emitter due to its indirect bandgap. Therefore, it is of great importance to identify new ways to accomplish efficient light emitters on a Si-based platform [6]. One promising way is doping silicon (or silica) with rare-earth elements (e.g.…”

Section: Introductionmentioning

confidence: 99%

Broadband enhancement of light emission in silicon slot waveguides

Jun¹,

Briggs²,

Atwater³

et al. 2009

Opt. Express

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“…In light of future applications in integrated photonic circuits, highly luminescent nanostructured silicon materials, e.g., silicon nanocrystal (Si-nc), have attracted a lot of recent attention [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

LDRD final report on Si nanocrystal as device prototype for spintronics applications.

Carroll¹,

Verley²,

Pan³

et al. 2006

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The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention-the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic

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“…Finally, in more than 20 samples under different thermal treatments (with the annealing temperature range from 800°C to 1100°C), the wavelength of PL peak was observed to be pinned between 900 and 1000 nm, independent of thermal budget. This pinning effect, we believe, is probably due to the formation of oxygen-related interface states.In light of possible applications in integrated photonic circuits, nanostructured silicon materials, e.g., silicon nanocrystal (SiNC), have attracted a lot of recent attentions [1][2][3][4][5]. In SiNC materials, due to strong quantum confinement effects, the extend of the overlap in the electron and hole wavefunctions and, consequently, the probability of a direct transition are greatly increased [6].…”

mentioning

confidence: 99%