Monolithic silicon E–ΔE telescope produced by the quasi-selective epitaxy

Pulse-shape analysis of signals from monolithic silicon – telescopes produced by the quasi-selective epitaxy

“…The monolithic E-DE telescopes suffer from the cross talks between E and DE detectors [1][2][3]5,7,8] due to the insufficiently low resistance of buried layer separating these detectors.…”

“…To decrease destructive effects of cross talks, long shaping time in spectrometric amplifiers was applied [4,[7][8][9].…”

“…Following suggestions from Ref. [8] pulses from E and DE detectors measured by charge amplifiers were digitalized by Tektronix TDS 744A oscilloscope in event by event mode and transferred to a PC computer memory. The initial parts of E and DE pulses, where cross-talk signal is mainly present, were rejected using off-line elaboration.…”

“…Time-dependent evolution of the cross-talk potential in the DE detector RC network as a function of position in the detector plane and the detector capacitance It is believed that cross-talks in monolithic E-DE telescopes can be described by the solution of the telegraphic equation in the DE detector RC network [8]. The aim of this section is to determine how the cross-talk potential propagates as a function of position in the detector plane and the DE detector capacitance.…”

“…The aim of this section is to determine how the cross-talk potential propagates as a function of position in the detector plane and the DE detector capacitance. Since analytic calculations for different positions at the circular monolithic E-DE are rather difficult, we have performed calculations for the square telescope of DE detector with junction surface ð0:28 cm 2 Þ, capacitance ðC ¼ 917:4 pF=cm 2 Þ and the sheet resistance ðR ¼ 4387 OÞ the same as for circular telescope with DE detector 20 mm [8].…”