Monolithic pin-HEMT 1.55 [micro sign]m photoreceiver on InP with 27 GHz bandwidth

Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janßen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G.

doi:10.1049/el:19961421

Cited by 19 publications

(2 citation statements)

References 4 publications

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“…Like the wide-band PD, the distributed amplifier (which itself had been reported to operate at 90 GHz [80]), was the key to enlarging the bandwidth. The 40-Gb/s OEIC was first demonstrated by using a WG-fed-PD and the HEMTbased distributed amplifier in 1996 [81] and then by using a WGPD and the HEMT-based distributed amplifier in 1997 [82]. These new technologies have continued to increase the bandwidth and, very recently, 50-Gb/s operation has been observed [83], [84].…”

Section: E Receiver Oeicmentioning

confidence: 99%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

315

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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Section: E Receiver Oeicmentioning

confidence: 99%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

315

127

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“…PIN-HEMT integration has been studied by several authors (2,3,4) and has been chosen in this work since InP based…”

Section: Introductionmentioning

confidence: 99%

Monolithic PIN-HEMT photoreceiver integration

Rondeau

Biblemont²,

Décobert³

et al.

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)

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In current telecommunications systems, there is a strong need to increase the data rate. The next generation of optical communication systems will operate at 40 Gb/s. As high-speed receivers for such systems, monolithic photoreceiver OEICs are very attractive, because of their potential for lower parasitics and higher performances compared to hybrid approaches. We report here the monolithic integration of a InP[Zn]/GaInAshP[Si] PIN photodiode with GaInAshP composite channel HEMTs. The PIN-HEMT structure is grown by single-step LP-MOVPE on pre-recessed semi-insulating InP substrate. This quasi-planar integration scheme allows a standard microelectronics processing. The O.1pm T-shape HEMT gates are defined by e-beam lithography, as close as 70pm to the 3pm deep photodiode pockets. As a preliminary result, a 4-channel receiver OEIC has photodiodes with 0.8 A/W responsivity, 30nA dark current at -1OV, two-stage amplifiers with 20 to 28 dB gain and a bandwith of 3GHz.

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Optical Photodetectors

Scavennec¹,

Giraudet²

2001

Springer Series in Photonics

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Monolithic pin-HEMT 1.55 [micro sign]m photoreceiver on InP with 27 GHz bandwidth

Cited by 19 publications

References 4 publications

Ultrawide-band/high-frequency photodetectors

Ultrawide-band/high-frequency photodetectors

Monolithic PIN-HEMT photoreceiver integration

Optical Photodetectors

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