Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions

Cioffi, K.R.

doi:10.1109/mcs.1992.185984

Cited by 33 publications

(5 citation statements)

References 6 publications

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“…Several low-power amplifiers were demonstrated utilizing Si-BJT/JFET and GaAs MESFET/PHEMT technologies [3][4][5] with a record Gain/P dc figure of merit of 19.1 dB/mW at 1.25 GHz [6], 5.65 dB/mW at 2.0 GHz [7], and 2.6 dB/mW at 5.5 GHz [8].…”

Section: Introductionmentioning

confidence: 99%

A C‐band ultra‐low‐power consumption HMIC amplifier for intelligent transportation system applications

Law

Shen

Aditya

et al. 2002

Micro & Optical Tech Letters

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Gaussian beam with an effective width of 10 m. While the BPM does not account for the reflected optical beam, it could be used to estimate the transmitted field when the metallic reflector is properly represented by its imaginary refractive index. The metallic shutter is thus modelled in the BPM analysis by a complex refractive index n m ϭ 0.4 ϩ j 8.3 [8]. A calculation window with 30 m ϫ 30 m is used with a number of grid points 128 ϫ 128. Simulation results for optical attenuation versus the shutter position at different shutter thickness are shown in Figure 5. We can also observe the same behaviour (peak in the received power and change in the attenuation sensitivity) at larger shutter thicknesses. This could be explained by the beam reflection from the shutter edge, which increases with the increase in shutter thickness. Such behavior is extremely important for the accurate modelling of the VOA, as it affects both its linearity and sensitivity. CONCLUSIONWe studied the effect of shutter thickness on the attenuation of an optomechanical VOA. Both the experimental and simulation results show that shutter thickness affects the functional behaviour of the VOA attenuation curve, by introducing a peak in the received power. The peak disappears when using a lensed fiber with the shutter located at the plane of the bean waist. These results are important for the precise modelling and design of an optomechanical VOA. A more complete analysis would also require studying the effect of shutter thickness on the polarisation-dependant loss. We are currently investigating this effect. INTRODUCTIONA radio frequency tag and interrogator is a system allowing contactless identification and tracking in applications ranging from computerized club entry, automatic billing, animal tag and track, to automatic waste management [1]. Such a system is awakened by an interrogating signal and sends back a coded response. A potential application in intelligent transport systems (ITSs) concerns dedicated short-range communications (DSRC), in which information is exchanged between roadside interrogators and on-board transponders. The European prestandard that defines the framework for DSRC recommends a 5.8-GHz carrier frequency within a 10-MHz bandwidth [2]. Since the communication distance extends from a few meters (vehicle tolling applications) to several tens of meters (traffic information), the tag should have a local RF source and be powered by an internal wristwatch battery. In this application, low power consumption in the active tag is very important for conserving battery life. An injection-locked directmodulation scheme is one solution to achieve a low-power-consumption active tag. In this scheme, an amplifier is needed to amplify the received weak interrogating signal for locking the local oscillator, thus stabilizing it to the interrogating frequency. By doing so the information to be transmitted can then be directly modulated on this frequency and transmitted back to the interrogator. A high-gain and low-power-consumption ampl...

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Section: Introductionmentioning

confidence: 99%

A C‐band ultra‐low‐power consumption HMIC amplifier for intelligent transportation system applications

Law

Shen

Aditya

et al. 2002

Micro & Optical Tech Letters

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“…Nevertheless, by comparing the best reported results in each technology, the fundamental device performance limits can be assessed. Most of the recently reported LNA results, fabricated in Si CMOS [21], or Si bipolar technologies [22], [23] [25]- [27]. These results demonstrate the potential performance advantage of advanced GaAs or SiGe technologies at these frequencies, if dc power dissipation is a major consideration.…”

Section: A Low-noise Amplifiersmentioning

confidence: 63%

Integrated circuit technology options for RFIC's-present status and future directions

Larson

Proceedings of CICC 97 - Custom Integrated Circuits Conference

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Abstract-This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

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“…So trade-off between Zopt, Rn, NFmin must be made when UGW and N of the FET is decided under fixed DC current supply. Roughly, lower equivalent resistance Rn and lower optimum impedance Zopt are more important than a lower minimum noise figure for L-band low noise amplifier [7].…”

Section: Design Methodsmentioning

confidence: 99%

Design of MMIC LNA for 1.9 GHz CDMA portable communication

Lin

Liu²,

Kooi³

et al.

ICMMT'98. 1998 International Conference on Microwave and Millimeter Wave Technology. Proceedings (Cat. No.98EX106)

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This work describes an on-chip matching MMIC LNA which was optimized for noise figure by careful selection of FET size, bias, and thorough consideration of its gamma opt and Rn characteristics. A new in-house developed inductor model and real-world extracted EEFET3 model are employed in order to assure accurate simulation. Source peaking technique is used to lower input return loss. The developed onchip matching LNA shows strong robustness that makes it easy to be fabricated with the existing 0.5-um GaAs MESFET process. Its low current consumption (3.2 mA) and high linearity (Ph, 1dB = -8 dBm, I-IP3 = 7.6 dBm, ACPR = -70 dBc) also make it suitable for CDMA portable wireless communication.

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Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions

Cited by 33 publications

References 6 publications

A C‐band ultra‐low‐power consumption HMIC amplifier for intelligent transportation system applications

A C‐band ultra‐low‐power consumption HMIC amplifier for intelligent transportation system applications

Integrated circuit technology options for RFIC's-present status and future directions

Design of MMIC LNA for 1.9 GHz CDMA portable communication

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