Monolithic Integration of Top Si<sub>3</sub>N<sub>4</sub> - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing

Lin, Chung-Ming; Hong, Po-Yu; Lee, Bing-Ju; Lin, Horng–Chih; George, T.; Li, Peiwen

doi:10.1109/iedm45625.2022.10019407

Cited by 2 publications

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“…Threshold powers of 35 W/cm 2 and ~ 100 W/cm. 2 for optically pumped lasing are achievable within an array of 3 × 3 Si 3 N 4 -embedded Ge-QD microdisks as well as a single Si 3 N 4 -embedded Ge-QD microdisk, respectively [47].…”

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The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

et al. 2023

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Beginning with our exciting discovery of germanium (Ge) spherical quantum-dot (QD) formation via the peculiar and symbiotic interactions of Si, Ge, and O interstitials, we have embarked on a journey of vigorous exploration, creating unique configurations of self-organized Ge-QDs/Si-containing layers. Our aim is to generate advanced Ge-QD photonic devices, while using standard, mainstream Si processing techniques. This paper summarizes our portfolio of innovative Ge-QD configurations. With emphasis on both controllability and repeatability, we have fabricated size-tunable, spherical Ge-QDs that are placed at predetermined spatial locations within Si-containing layers (SiO2, Si3N4, and Si) using a coordinated combination of lithographic patterning and self-assembled growth. We have successfully exploited the multi-dimensional, parameter spaces of process conditions in combination with layout designs to achieve exquisite control available through the thermal oxidation of lithographically patterned, poly-Si1 − xGex structures in close proximity with Si3N4/Si layers. In so doing, we have gained insight into the growth kinetics and formation mechanisms of self-organized, Ge spherical QDs embedded within SiO2, Si3N4, and Si layers, respectively. Our Ge-QD configurations have opened up a myriad of process/integration possibilities including top-to-bottom evanescent-wave coupling structures for SiN-waveguided Ge-QD photodetectors and Ge-QD light emitters for Si photonics within Si3N4 integrated photonics platforms for on-chip interconnects and sensing.

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The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

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“…Fabrication by thermal oxidation at 800 • C-900 • C, our self-organized Ge QD/Si 3 N 4 systems also come with the inherent advantage of high-temperature thermal stability that has allowed monolithic integration of SiN bus-waveguided Ge QDs microdisk (µ-disk) light emitters and top-waveguided p-i-n PDs on top of SOI (Fig. 1) [24]. In this work, we reported detailed design and analysis of fabricated SiN/Si WGs, Ge QD light emitters, and Ge QD p-i-n PDs via extensive simulations and structural examinations.…”

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Self-Organized Germanium Quantum Dots/Si₃N₄ Enabling Monolithic Integration of Top Si₃N₄-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing

Lin

Hong

Lee

et al. 2023

IEEE Trans. Electron Devices

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Using a coordinated combination of lithographic patterning and self-assembled growth, Ge spherical quantum dots (QDs) were controllably generated within host layers of Si 3 N 4 as active medium for Si photonics. A significant fabrication advantage of our approach is the high-temperature thermal stability of Ge QDs that are formed by thermal oxidation of poly-SiGe lithographically patterned structures at 800 • C-900 • C, offering flexibility in the waveguide (WG)-material choices, co-design, and integration of Ge photonic devices. Our Ge QDs enable monolithic integration of microdisk light emitters and p-i-n photodetectors (PDs) with top-Si 3 N 4 WG-coupled structures using standard Si processing. Low dark current of 0.3 mA/cm 2 at 300 K and 0.2 µA/cm 2 at 77 K in combination with 3-dB frequency of 12 GHz for Ge-QD PDs and low threshold power of 0.6 kW/cm 2 for optically pumped Ge QD/SiN microdisks light emission evidence the high degree of crystallinity of our Ge QDs being an effective building block for 3-D SiN photonic integrated circuits. Index Terms-Ge, microdisks, photodiodes (PDs), quantum dot (QD), top-Si 3 N 4 waveguides (WGs).

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Monolithic Integration of Top Si₃N₄ - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing

Cited by 2 publications

References 5 publications

The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

Self-Organized Germanium Quantum Dots/Si₃N₄ Enabling Monolithic Integration of Top Si₃N₄-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing

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Monolithic Integration of Top Si3N4 - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing

Cited by 2 publications

References 5 publications

The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

Self-Organized Germanium Quantum Dots/Si3N4 Enabling Monolithic Integration of Top Si3N4-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing

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Monolithic Integration of Top Si₃N₄ - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing

Self-Organized Germanium Quantum Dots/Si₃N₄ Enabling Monolithic Integration of Top Si₃N₄-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing