Monolithic integration of quantum cascade laser, quantum cascade detector, and subwavelength waveguides for mid-infrared integrated gas sensing

Chakravarty, Swapnajit; Midkiff, Jason; Yoo, Kyoungmin; Rostamian, Ali; Chen, Ray T.

doi:10.1117/12.2508873

Cited by 4 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…First of all, epitaxial growth of InP/InGaAs/InP/InGaAs layers on InP substrate wafers was performed by OEpic company (Figure S6a). The layers are designed for monolithic integration with QCL/QCD and PRS devices at λ = 6.15 μm , as shown in Figure S1. We defined suspending area using contact photolithography with AZ 5214-E photoresist (PR) (Figure S6b).…”

Section: Methodsmentioning

confidence: 99%

“…As our final targeted device is based on the homogeneous integration between QCL/QCDs and passive waveguides beneath them, the epitaxial material structure for this work is chosen considering efficient light coupling between these components. In our previous research, we addressed and demonstrated all fundamental methodology and device integration steps, including monolithic epitaxial growth of the QCL/QCDs and compact integrated passive components’ fabrication feasibility. − Several important remarks are described in the Supporting Information. Figure S1 shows the schematic of fully integrated monolithic sensors with QCL/QCDs and suspended waveguide passive sensing device; also, the cross-sectional SEM images of suspended HPCWs and SWWs are shown.…”

Section: Device Designmentioning

confidence: 99%

“…Figure S1 shows the schematic of fully integrated monolithic sensors with QCL/QCDs and suspended waveguide passive sensing device; also, the cross-sectional SEM images of suspended HPCWs and SWWs are shown. With regard to the structure of QCL/QCDs and PRS, the epi structure comprises an InP substrate with 1.15 μm InGaAs waveguide core layer targeting λ = 6.15 μm operating devices. − Figure a,b shows a schematic of suspended SWW and HPCW devices that shows their structures and working characteristics with the corresponding SEM images. Detailed design principles for each device are described below.…”

Section: Device Designmentioning

confidence: 99%

See 2 more Smart Citations

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor

et al. 2020

Self Cite

View full text Add to dashboard Cite

Mid-infrared (mid-IR) absorption spectroscopy based on integrated photonic circuits has shown great promise in trace-gas sensing applications in which the mid-IR radiation directly interacts with the targeted analyte. In this paper, considering monolithic integrated circuits with quantum cascade lasers (QCLs) and quantum cascade detectors (QCDs), the InGaAs−InP platform is chosen to fabricate passive waveguide gas sensing devices. Fully suspended InGaAs waveguide devices with holey photonic crystal waveguides (HPCWs) and subwavelength grating cladding waveguides (SWWs) are designed and fabricated for mid-infrared sensing at λ = 6.15 μm in the low-index contrast InGaAs−InP platform. We experimentally detect 5 ppm ammonia with a 1 mm long suspended HPCW and separately with a 3 mm long suspended SWW, with propagation losses of 39.1 and 4.1 dB/cm, respectively. Furthermore, based on the Beer−Lambert infrared absorption law and the experimental results of discrete components, we estimated the minimum detectable gas concentration of 84 ppb from a QCL/QCD integrated SWW sensor. To the best of our knowledge, this is the first demonstration of suspended InGaAs membrane waveguides in the InGaAs−InP platform at such a long wavelength with gas sensing results. Also, this result emphasizes the advantage of SWWs to reduce the total transmission loss and the size of the fully integrated device's footprint by virtue of its low propagation loss and TM mode compatibility in comparison to HPCWs. This study enables the possibility of monolithic integration of quantum cascade devices with TM polarized characteristics and passive waveguide sensing devices for on-chip mid-IR absorption spectroscopy.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

See 1 more Smart Citation

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…In parallel, in order to extend the lasing wavelength to below 6 µm and simultaneously enable low power consumption, high sensitivity, and sufficient design flexibility, subsequent work focused on ICL technology and integrated setups have been demonstrated for 3.1 µm [164]. On the other front, Ray Chen's group has shown a sensor with QCL and QCD as sources, and detectors integrated with an InGaAs-InP monolithic platform, and gas sensing was demonstrated [165,166] making the pursuit of an on-chip integrated sensor for gas sensing close to reality.…”

Section: Integration Of All Three Componentsmentioning

confidence: 99%

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

Alberti

Datta

Jágerská

2021

Sensors

View full text Add to dashboard Cite

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light–analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

show abstract

“…While mid-IR lasers and detectors have been combined [ 7 , 8 , 9 ], and sensing waveguides have been integrated with detectors [ 10 , 11 ], we are aware of only one report to date of all three fundamental components being integrated on the same mid-IR PIC. This was a QCL and QCD integrated on the same chip with a suspended membrane waveguide patterned with subwavelength slots, which was designed for sensing that had not yet been demonstrated [ 12 ]. Although still immature, more complete sensing PICs operating in the near IR have been reported [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Meyer

Kim

et al. 2021

Sensors

View full text Add to dashboard Cite

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.

show abstract

Monolithic integration of quantum cascade laser, quantum cascade detector, and subwavelength waveguides for mid-infrared integrated gas sensing

Cited by 4 publications

References 12 publications

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

Interband Cascade Photonic Integrated Circuits on Native III-V Chip

Contact Info

Product

Resources

About