Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

Viazmitinov, Dmitrii V.; Berdnikov, Yury; Kadkhodazadeh, Shima; Dragunova, A. S.; Sibirev, N. V.; Kryzhanovskaya, N. V.; Radko, Ilya P.; Huck, Alexander; Yvind, Kresten; Semenova, Elizaveta

doi:10.1039/d0nr05779g

Cited by 6 publications

(10 citation statements)

References 48 publications

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“…Even though the individual structures have a similar volume, we observe a significant variation of the µPL from inclusion to inclusion (as illustrated in figure 1(b)). This difference in the PL intensity is associated with different amount of residual In inside the nanoinclusions [8].…”

Section: Resultsmentioning

confidence: 94%

“…The fabrication process used in this work begins with several fabrication stages of masking the substrate surface and formation of opening in the substrate [8]. Si (100) wafer was covered by a SiNx mask with an array of openings 200 nm in diameter spaced 800 nm apart each other, followed by Si etching.…”

Section: Methodsmentioning

confidence: 99%

“…Si (100) wafer was covered by a SiNx mask with an array of openings 200 nm in diameter spaced 800 nm apart each other, followed by Si etching. Next, indium-rich melt was deposited into the formed openings and annealed in As and P precursor fluxes inside the chamber of metal-organic vapor phase epitaxy (MOVPE) setup [8]. µPL maps and spectra were obtained using an Integra Spectra (NT-MDT confocal microscope at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…Various techniques such as wafer bonding [6], growth on thick buffer layers [7], template-assisted growth and others have been proposed to integrate A3B5 compounds on Si substrate. In this work, we study the regular arrays of InP and In(As,P) nanoinclusions epitaxially grown in the openings of Si (100) substrates using the recently developed technique described in our previous work [8].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

Melnichenko

Dragunova

Kryzhanovskaya

et al. 2022

J. Phys.: Conf. Ser.

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We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

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Section: Resultsmentioning

confidence: 94%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

Melnichenko

Dragunova

Kryzhanovskaya

et al. 2022

J. Phys.: Conf. Ser.

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“…Significant progress has been made in the synthesis of ordered heterostructured III–V nanowires on a Si substrate [ 28 , 29 ]. More recently, a new epitaxial growth method using organometallic vapor phase epitaxy, called selective melt-based growth (MADSAG), has been introduced recently [ 30 ]. This method is a combination of growth elements, drop-induced group III element and SAG.…”

Section: Introductionmentioning

confidence: 99%

Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

Melnichenko¹,

Moiseev²,

Kryzhanovskaya³

et al. 2022

Nanomaterials

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We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal–organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence spectroscopy at room temperature. The tuning of the emission line in the spectral range from 1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs1−xPx for nanoscale optical devices operating at the telecom band.

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