2001
DOI: 10.1063/1.1360231
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Monolithic-integrated two-wavelength laser diodes for digital-versatile-disk/compact-disk playback

Abstract: We have developed a monolithic two-wavelength laser diode, which emits 650 and 780 nm wavelengths. This device, which has a separated-confinement-heterostructure multi-quantum-well active region and a gain-guiding tapered-stripe structure, is fabricated using only two steps of metal organic chemical vapor deposition. The operating currents at 5 mW are 57.0 and 61.5 mA for the 650 and 780 nm elements, respectively. The relative intensity noise of the 650 and 780 nm elements was below −130 dB/Hz up to 70 °C with… Show more

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Cited by 13 publications
(4 citation statements)
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“…As a technique for obtaining two or more emissions of semiconductor lasers having different peak wavelengths from each other, a GaAs-based dual-wavelength laser for CD / DVD is known. [9] In this case, it is 785 nm for CD and 660 nm for DVD. This forms an infrared laser for CD and a red laser diode for DVD laser diode on the same substrate on an n-type GaAs substrate.…”
Section: Multi-wavelength Chipmentioning
confidence: 94%
“…As a technique for obtaining two or more emissions of semiconductor lasers having different peak wavelengths from each other, a GaAs-based dual-wavelength laser for CD / DVD is known. [9] In this case, it is 785 nm for CD and 660 nm for DVD. This forms an infrared laser for CD and a red laser diode for DVD laser diode on the same substrate on an n-type GaAs substrate.…”
Section: Multi-wavelength Chipmentioning
confidence: 94%
“…GaAs-based dual-wavelength laser for compact disc (CD) and digital versatile disc (DVD) is known as a technique for obtaining two or more light emissions with different peak wavelengths from a laser diode. [7] 785 nm is for CD and 660 nm is for DVD. This involves forming an infrared (for CD) laser section and a red (for DVD) laser section on the same n-type GaAs substrate.…”
Section: Figure 6 Speckle Noise Reduction Technology and Simulation R...mentioning
confidence: 99%
“…It is necessary to confine the interval of two emitting points of LD chips within 110 AE 3 mm. To this end, there are two approaches: one is to fabricate two different active layers on one chip (a monolithic-integrated solution), 1) the other is to place two different LD chips side-by-side on one substrate (a hybrid-integrated solution). 2) However, none of these approaches has thus far been successfully applied to mass production.…”
Section: Introductionmentioning
confidence: 99%