Monolithic integrated emitting-detecting configuration based on strained Ge microbridge

Abstract

The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser source. Here, we report a monolithically integrated microbridge-based emitting-detecting configuration, equipped with lateral p–i–n junctions, waveguide and gratings. The operating wavelength range of the emitting bridge and the detecting bridge are matched through the designed same dimensions of the two microbridges, as well as the strain. Strain-enhanced spontaneous emission and the effect of spectra red-shifting on low-loss transmission of on-chip light are discussed. Temperature dependence experiments reveal that in devices with highly strain-enhanced structure, the strain variation can offset the effect of electron thermalization, so that the performance of the device remains stable when temperature changes around room temperature.

Lateral Si0.15Ge0.85/Ge/Si0.15Ge0.85 Double-Heterojunction Laser With SiN Stressor

“…These grooves had a width of 308 nm and a spacing of 132 nm. 10) PECVD was used to fill the grooves created in step (8) with SiO 2 , forming a distributed Bragg reflector. 11) Metal electrodes were deposited on the P and N regions through sputtering etching and deposition to establish the strip metal electrodes.…”

Theoretical study of small signal modulation behavior of Fabry-Perot germanium-on-silicon lasers

“…They have demonstrated that using alloying method and special structures, compact group IV lasers can be realized with a low threshold value (an optical pumping threshold density of ∼3.0 kW•cm −2 ) and high efficiency (a differential quantum efficiency close to 100%) [36]. There are also some research efforts on Ge LEDs and photodetectors [38,39].…”

(Digital Presentation) Epitaxially Grown of SiGe on Ge Microbridge and Observation of Strong Resonant Light Emission

“…It was shown that the uniaxial tensile strain can be largely enhanced in the MB, offering further improved luminescence efficiency [8][9][10][11][12][13]. There are several reports on light emitting diode devices based on Ge MB structures [14,15]. In these reports standards Si (100) substrates have used and bridge directions were set to be <001> direction.…”