Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Abstract

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on...

Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts

“…More recently, single-crystal InSb nanostructures were successfully grown on silicon using rapid melt growth. Residual strain and occasional crystal defects in the nanostructures caused a redshift of the expected mid-wavelength IR (MIR, 3-8 μm) photoresponse onset into the LWIR range (10 μm) [16].…”