Monolithic HTS microwave phase shifter and other devices

Jackson, Charles M.; Kobayashi, June H.; Guillory, E.B.; Pettiette-Hall, C.L.; Burch, J.F.

doi:10.1007/bf00618142

Cited by 8 publications

(1 citation statement)

References 18 publications

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“…However the effect is usually small and also results in an increase in the loss of the transmission line [5]. Phase shifters based on arrays of junctions in the form of SQUIDs have been produced, but the power handling of these devices is very limited [6]. More recently, interest has emerged in micro electromechanical systems (MEMS), where tunability is obtained by the physical movement of a component, for example to change the capacitance of the device.…”

Section: Introductionmentioning

confidence: 99%

Thin-film ferroelectric microwave devices

Lancaster

Powell

Porch

1998

Supercond. Sci. Technol.

218

113

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When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials; this includes models of the ferroelectric permittivity and loss tangent, as well as methods of measurement of these properties. New measurements are presented on thin-film strontium titanate and single-crystal strontium barium titanate substrates. These results are compared with the model. A brief discussion is given of the applications of ferroelectric material in microwave devices.

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Section: Introductionmentioning

confidence: 99%