Monolithic GaAs MESFET power sensor microsystem

Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer

“…Gallium arsenide (GaAs) has attracted considerable attentions by offering a number of material-related properties and technological advantages over Si (such as direct band gap, high electron mobility and so on) [1,2,3]. It would probably be the substitute of Si.…”

Polyimide-fixed GaAs Island structure prepared using plasma etching technique

“…In comparison with silicon, gallium arsenide offers a number of materialrelated advantages (lower thermal conductivity, higher mobility of electrons, direct band gap) and technological advantages (the precise control of thickness and uniformity of GaAs-based micromechanical structures such as cantilever beams [1,2], membranes [3,4] or bridges [5]. They create conditions more convenient especially for design of Micromechanical Thermal Converter (MTC) devices.…”

“…MTC based on GaAs should be capable to perform an electro-thermal conversion of higher conversion efficiency. MTC can be considered as a heart of various thermally based MEMS devices as are power sensors [1,6], pressure sensors [4] or microactuators [7].…”

Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices

“…Silicon (Si) based microelectromechanical systems (MEMS) are now a well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material‐related and technological advantages over Si (Hjort et al , 1994; Lalinsky et al , 1995; Leclercq et al , 1998). First of all, there are some physical intrinsic properties of this material (piezoelectricity, direct bandgap, lower thermal conductivity, higher saturation velocity of electrons, high‐temperature stability, heterostructure based quantum effects), which make it an attractive alternative to the well developed Si based MEMS.…”

“…A precise control in the thickness and uniformity of GaAs based micromechanical structures like cantilever beams (Lalinsky et al , 1995; 1999; 2000), membranes (Dehé et al , 1995; Leclercq et al , 1998) or bridges (Lalinsky et al , 2001) can be achieved directly via the thickness of the MBE grown materials over an etch‐stop layer. There were AlGaAs/GaAs (Dehé et al , 1995; Lalinsky et al , 1995), AlGaAs/InGaAs/GaAs (Leclercq et al , 1998) and InGaP/InGaAs/GaAs (Lalinsky et al , 2001) heterostructure systems designed to be used for micromachining technology of the micromechanical structures.…”