1982 Ultrasonics Symposium 1982
DOI: 10.1109/ultsym.1982.197868
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Monolithic GaAs Acoustic Charge Transport Devices

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Cited by 10 publications
(5 citation statements)
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“…They occur because of the ageostrophic circulation at the jet entrance (Hoskins 1982) and coincide with the frontal zone beneath the jet. Deep folds can extend down to the top of the boundary layer (Browell et al 1987;Vaughan et al 1994), while smaller folds, extending only into the upper troposphere, are ubiquitous around the polar jet stream (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…They occur because of the ageostrophic circulation at the jet entrance (Hoskins 1982) and coincide with the frontal zone beneath the jet. Deep folds can extend down to the top of the boundary layer (Browell et al 1987;Vaughan et al 1994), while smaller folds, extending only into the upper troposphere, are ubiquitous around the polar jet stream (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…A more detailed circuit is given elsewhere [ 3 ] . The TRAPATT diode [2] ~ mounted in a coaxial line with no tuning slugs, is biased from the variable dc pedestal voltage Vo together with a pulsed output from the pulser. The oscillator was also pulse modulated, triggered by the pulser 1 to ensure appropriate coincidence of the RF and bias pulses.…”
Section: Experimestal Resultsmentioning
confidence: 99%
“…The results of some associated experiments reported in this letter clearly demonstrate that such devices can exhibit a broad-band negative resistance characteristic over the frequency of the oscillator circuit. The existance of such a small-signal negative resistance may be significant in the explanation of the ease of starting and operation of the simple TRAPATT oscillator circuit described by Davies, Newton, and Summers [2] …”
Section: Introductionmentioning
confidence: 99%
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“…A more exploratory yet potentially high-performance technology is the acoustic-charge-transport (ACT) device [39]. ACT devices offer CCD-like sampling using SAW for charge transport.…”
Section: Enhancements and Future Directions Device Technologiesmentioning
confidence: 99%