Monolithic arrays of silicon sensors

Abstract

Monolithic arrays of silicon p-n junctions are commonly used to deliver spatial information on impinging radiation, with the advantages of low-noise and fast signal generation. Additionally, array geometries also allow for a segmentation of a large area into individual channels that can be read out in parallel, so that a high-event rate can be managed. To optimize the noise performance, however, some key points must be addressed to control the silicon/silicon oxide interface. Replacing the p-n junctions with silicon drift sensors avoids noise related to the interface states, at the expense of a more complicated process and slower signals. In this paper, some of the aspects needing consideration when engineering a monolithic array of silicon sensors are reviewed.