Monolithic Above-IC Resonator Technology for Integrated Architectures in Mobile and Wireless Communication

Dubois, Marc; Carpentier, Jean‐François; Vincent, Pierre; Billard, C.; Parat, G.; Müller, C.; Ancey, P.; Conti, P.

doi:10.1109/jssc.2005.858627

Cited by 83 publications

(43 citation statements)

References 10 publications

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“…2,3 Recent development of micromachining techniques has greatly facilitated the realization of various miniaturized piezoelectric devices, including zinc-oxide ͑ZnO͒ beam-structured, 4 disk, 5 and film bulk acoustic resonators ͑FBARs͒, 6 the noteworthy Agilent's commercialized AlN FBARs, 7 AlN contour-mode resonators and filters, 8 and monolithically integrated FBAR-complementary metal oxide semiconductor ͑CMOS͒ filters. 9 All these piezoelectric microelectromechanical systems ͑MEMS͒ have relied on active layers of approximately micron scale thickness that provide strong electromechanical coupling.…”

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confidence: 99%

“…Among its attributes are intrinsic integrability, high efficiency and electrical tunability, low power consumption, and low thermal budgets for materials processing permitting post-CMOS integration. [5][6][7][8][9] Previously we have prototyped piezoelectric NEMS using epitaxial gallium arsenide ͑GaAs͒ heterostructures. 14 To date, however, nanoscale resonators have not yet been realized with materials having higher piezoelectric coupling efficiency.…”

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confidence: 99%

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Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin

Matheny

Feng

et al. 2009

Applied Physics Letters

155

119

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We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride ͑AlN͒ layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ϳ80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d 31 = 2.4 pm/ V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.

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confidence: 99%

mentioning

confidence: 99%

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin

Matheny

Feng

et al. 2009

Applied Physics Letters

155

119

View full text Add to dashboard Cite

show abstract

“…The basic configuration of a BAW (Bulk Acoustic Wave) resonator is a piezoelectric thin film surrounded by two metal electrodes [43,44,45,46,47,48,49,50,51,52]. Fig.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

“…The second configuration is the solidly mounted resonator (SMR), in which the acoustic impedance of the substrate is transformed to a very low value to reduce the energy loss through the substrate and hence sustaining the high Q-factor of the resonator. In comparison with surface acoustic wave (SAW) devices, BAW resonators and filters exhibit a lower frequency drift with temperature [50]. The FBAR resonator can be modeled electrically as a series RLC circuit in parallel with a capacitor.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%