Monofilament production in the USSR

Current transport mechanisms in n‐InSe/p‐CdTe heterojunctions

“…One of the promising solutions of this problem could be seen in anisotype heterojunction n-InSe/p-CdTe, because layered semiconductor InSe is radiation-stable and also allows manufacturing the structures by deposition over optical contact [5]. This method results in a very strong adhesion of the contacting parts, approaching to the durability of a bulk material.…”

“…This method results in a very strong adhesion of the contacting parts, approaching to the durability of a bulk material. It is worth mentioning that the chosen device formation methodology does not require high-temperature technological operations, which could potentially influence or change the properties of semiconductors and allowing to avoid formation of the additional marginal states and effects of cross-doping [5]. Deposition over optical contact is also successfully used to create heterojunctions based on А 3 В 6 compounds [6].…”