Monocrystalline Quartz ICP Etching: Road to High-Temperature Dry Etching

Осипов, А. А.; Iankevich, Gleb A.; Alexandrov, Sergei

doi:10.1007/s11090-019-10025-6

Cited by 15 publications

(5 citation statements)

References 26 publications

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“…For the experiments at different temperatures, the unit was equipped with a substrate holder with an internally integrated heating unit. The design of the substrate holder allowed to heat and maintain the required temperature of the substrate within the range of 20 to 400 °C 29 . To perform the etching process at 15 °C the system substrate holder was exchanged to the one equipped with a water cooling lines.…”

Section: Methodsmentioning

confidence: 99%

“…Since direct measurement and control of the processed substrate surface temperature under plasma etching conditions is itself a technically challenging task, the substrate holder surface temperature was measured in this study. The control was carried out using a type-K thermocouple located in close proximity to the lower plane of the top plate of the holder, to which a sample of silicon carbide was clamped 29 .…”

Section: Methodsmentioning

confidence: 99%

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High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов

Iankevich

Speshilova

et al. 2020

Sci Rep

Self Cite

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In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (Rms = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF6/O2 inductively coupled plasma (ICP) at increased substrate holder temperatures. It was shown that change in the temperature of the substrate holder in the range from 100 to 300 °C leads to a sharp decrease in the root mean square roughness from 153 to 0.7 nm. Along with this, it has been established that the etching rate of SiC also depends on the temperature of the substrate holder and reaches its maximum (1.28 µm/min) at temperatures close to 150 °C. Further temperature increase to 300 °C does not lead to the etching rate rising. The comparison of the results of the thermally stimulated process and the etching with a water-cooled substrate holder (15 °C) is carried out. Plasma optical emission spectroscopy was carried out at different temperatures of the substrate holder.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов

Iankevich

Speshilova

et al. 2020

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…The etching rate of these etchants depends on the crystal orientation and plays a crucial role in the formation of structures. Dry etching is divided into reactive ion etching (RIE) and deep RIE (DRIE) [91], which occur by removing the substrate material with a gaseous etchant. Plasma‐based method and high aspect‐ratio silicon etching method are achieved by alternating process of plasma etching of the substrate material and the deposition of etching protecting polymers on the sides.…”

Section: Key Technologies For Power Sensingmentioning

confidence: 99%

Application status and development trend of intelligent sensor technology in the electric power industry

Li,

Fan,

Liu

et al. 2024

IET Science Measure & Tech

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With the rapid development of digital technologies such as intelligent control and information communication, digitization has gradually become an inevitable trend to promote technology innovation and industrial upgrading for the power grid. As the basis of digital technology, digital sensing technology will gradually penetrate all aspects of the power system for comprehensive perception and high operational reliability. First, this article introduces the application status and technical requirements of power intelligent sensor technology in various aspects of the power system, including the generation, transmission, transformation, distribution, and consumption of electricity. Next, domestic and foreign scholars' latest research achievements in power sensing technology are described from three major aspects, that is, optical fiber sensing technology, MEMS sensing technology, and sensor self‐powered technology. Finally, future challenges for the electric power intelligent sensors are discussed and an outlook of future widespread application in the clean, safe, and efficient digital power grid is provided.

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“…However, small-sized structures are difficult to process in this way and have poor sidewall morphologies. Additionally, the typical single-quartz etching depth (with better morphology) is generally less than 50 μm [20][21][22]. Currently, the thickness of the single-crystal quartz wafer is generally more than 100 μm.…”

Section: The Design Of the Overall Processmentioning

confidence: 99%

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz

Han

Zhao

et al. 2020

Micromachines

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Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 μm were obtained by using this method, and a complex three-dimensional structure with an 80 μm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.

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Monocrystalline Quartz ICP Etching: Road to High-Temperature Dry Etching

Cited by 15 publications

References 26 publications

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Application status and development trend of intelligent sensor technology in the electric power industry

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz

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