Mono-Material Multilayer Interference Optical Filter with Sub-Wavelength Structure for Infrared and Terahertz Optics

Wada, Takehiko; Makitsubo, Hironobu; Mita, Makoto

doi:10.1143/apex.3.102503

Cited by 17 publications

(7 citation statements)

References 22 publications

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“…Transparent/Ohmic contact on the Ge detector is fabricated by an MBE technique [22]. Anti-reflection is realized by sub-wavelength structure layer [23].…”

Section: Development Of Si/ge Hybridizationmentioning

confidence: 99%

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

et al. 2016

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We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 µm), (2) large power consumption (10 µW/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface-activated bond technology, whose cut-off wavelength is longer than 160 µm, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 µW/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to 123 218 J Low Temp Phys (2016) 184:217-224 thermal cycling down to 3 K. With these new techniques, we are now developing a 32 × 32 FIR imaging sensor.

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“…Transparent/Ohmic contact on the Ge detector is fabricated by an MBE technique [22]. Anti-reflection is realized by sub-wavelength structure layer [23].…”

Section: Development Of Si/ge Hybridizationmentioning

confidence: 99%

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

et al. 2016

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“…To overcome these difficulties, we proposed an all-silicon (mono-material) multi-layer interference filter with sub-wavelength structure (SWS) [9]; Fig. 1 (a) shows a cross-sectional schematic of the filter.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

Makitsubo

Wada

Kataza

et al. 2016

J Infrared Milli Terahz Waves

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We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against cryogenic thermal cycling and mechanical damage. We demonstrate fabrication of a three-layer prototype using well-established common micro-electro-mechanical systems (MEMS) technologies as a first step toward developing practical filters. The measured transmittance of the three-layer filter agrees well with the theoretical transmittances calculated by a simple thinfilm calculation with effective refractive indices as well as a rigorous coupledwave analysis simulation. We experimentally show that SWS layers can work as homogeneous thin-film interference layers with effective refractive indices even if there are multiple SWS layers in a filter.

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“…Much attention has been drawn to THz and great breakthrough has been made to pave a way for the use of optical near-field, waveguide, filtering [3][4][5] . In terahertz region, the metal is no longer regarded as a perfect mirror and extraordinary transmission is observed if some subwavelength-scale structures are fabricated [6] .…”

Section: Introductionmentioning

confidence: 99%

Terahertz wide band-pass filter design based on double layer metal hole arrays

et al. 2011

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This paper illustrates the fundamental transmission characteristics of periodic air hole metal array utilizing FDTD simulations. A metal-dielectric structure with periodic hole arrays perforated in the metal layer is presented. By changing the values of parameters, such as dielectric constant, thickness of the metal film and hole periodicity, the transmission responses are explored at terahertz regime. The surface plasmon polaritons play a significant role in the transmission.Based on the analysis, a wide band-pass filter containing metal-dielectric-metal layers is designed with square lattices of air holes in metal layers. The parameters of the structures are carefully selected to give a filtering characteristic with relatively wide and flat pass-band exceeding 200 GHz, over 95% THz transmittance and easy manufacture process. This kind of sample structure can be the potential candidate of filters in terahertz systems.

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Mono-Material Multilayer Interference Optical Filter with Sub-Wavelength Structure for Infrared and Terahertz Optics

Cited by 17 publications

References 22 publications

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

Terahertz wide band-pass filter design based on double layer metal hole arrays

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