“…According to Fig. 4 it can be observed that the forward current I f of HCP-2 compound with greater value compared with HCP-4 compound this behaviour is believed to be due to mono substituted dioxyphenylcoumarin of high chemical molecular interaction and high electron density [29,30]. The diode parameters of Al/HCP-2/p-Si/Al and Al/HCP-4/p-Si/Al devices have been estimated and presented in Table 1.…”
Section: I-v Characteristics For Al/hcp-2/p-si/al and Al/hcp-4/p-si/amentioning
confidence: 99%
“…It is noted from Fig. 5 that, the Al/HCP-2/p-Si/Al diode of low series resistance and high shunt resistance which indicates that the diode of mono substituent dioxyphenylcoumarin bearing cyclotriphosphazene compound is mostly favoured by larger electron rich substituent and this is related to the arrangement of dioxyphenylcoumarin groups [30][31][32].…”
Section: I-v Characteristics For Al/hcp-2/p-si/al and Al/hcp-4/p-si/amentioning
“…According to Fig. 4 it can be observed that the forward current I f of HCP-2 compound with greater value compared with HCP-4 compound this behaviour is believed to be due to mono substituted dioxyphenylcoumarin of high chemical molecular interaction and high electron density [29,30]. The diode parameters of Al/HCP-2/p-Si/Al and Al/HCP-4/p-Si/Al devices have been estimated and presented in Table 1.…”
Section: I-v Characteristics For Al/hcp-2/p-si/al and Al/hcp-4/p-si/amentioning
confidence: 99%
“…It is noted from Fig. 5 that, the Al/HCP-2/p-Si/Al diode of low series resistance and high shunt resistance which indicates that the diode of mono substituent dioxyphenylcoumarin bearing cyclotriphosphazene compound is mostly favoured by larger electron rich substituent and this is related to the arrangement of dioxyphenylcoumarin groups [30][31][32].…”
Section: I-v Characteristics For Al/hcp-2/p-si/al and Al/hcp-4/p-si/amentioning
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