Monitoring of low-dose ion implantation in silicon

Hara, Tohru; Hagiwara, Hiroyuki; Ichikawa, Ryuji; Nakashima, S.; Mizoguchi, K.; Smith, W. L.; Welles, C.; Hahn, S.; Larson, Larry L.

doi:10.1109/55.63008

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Semiconductors and Superconductors1

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1991

1997

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Cited by 11 publications

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“…In the area of semiconductors the major application still lies in the detection and identification of defects, including strain. Residud impurities have been studied in doped III-V semiconductors (343,344), and low-dose ion implantation has been monitored in silicon (345). The Raman microprobe has been used to characterize structurd defects in patterned gdlium arsenide on silicon (346), and impurities nave been identified in gallium phosphide (347).…”

Section: Semiconductors and Superconductorsmentioning

confidence: 99%