Monitoring of Ga-Na melt electrical resistance and its correlation with crystal growth on the Na Flux method

Abstract

The electrical resistance of Ga-Na melt used for gallium nitride crystal growth on a Na flux was investigated with the four-point probe method. Electrical resistance of melt was measured isothermal at 870 °C as the function of time. Pressure decay measurement and crystal growth evaluation were performed and show that the electrical resistance of melt and the number of dissolved nitrogen were strongly correlated. Time-dependency of nitrogen concentration in melt was revealed and verified from the increasing growth rate. The strong correlation between measurement and crystal growth shows the high potential use of electrical resistance measurements as the monitoring method.