Monitoring of atomic layer deposition by incremental dielectric reflection

Rosental, A.; Adamson, Peep; Gerst, A.; Niilisk, Ahti

doi:10.1016/s0169-4332(96)00483-7

Cited by 30 publications

(13 citation statements)

References 9 publications

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“…In this case we find that if the thickness of the (15) where t. = 1 for s polarization and t. = cos2 co = 1-(a /, ) 2 co for p polarization (i = a,1, f, s).…”

Section: Interference Filmmentioning

confidence: 71%

<title>Diagnostics of ultrathin dielectric layers by the method of differential reflection of light</title>

Adamson

2001

Optical Organic and Inorganic Materials

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The effect of ultrathin dielectric layers on the reflection of linearly polarized light from transparent or strongly absorbing massive substrate or from an interference film from the viewpoint of optical diagnostics of such layers is investigated. Approximate formulas describing the contribution of ultrathin layers to conventional Fresnel reflectivity for s-and ppolarized light are obtained by the perturbation method. The dependence of the differential reflection on the angle of incidence and parameters of media is analyzed. It is shown that approximate expressions describing the differential reflection can be used to solve easily the inverse problem, in particular, for unambiguous determination of the thickness and refractive index ofultrathin surface layers.

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“…In this case we find that if the thickness of the (15) where t. = 1 for s polarization and t. = cos2 co = 1-(a /, ) 2 co for p polarization (i = a,1, f, s).…”

Section: Interference Filmmentioning

confidence: 71%

<title>Diagnostics of ultrathin dielectric layers by the method of differential reflection of light</title>

Adamson

2001

Optical Organic and Inorganic Materials

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“…The growth was performed in a self-constructed small-size hot-wall ALD reactor [13,14]. The apparatus includes an optical reflectance-type monitoring system [15,16], one of the benefits of this being the possibility to terminate the growth at a desired thickness. The precursors were CrO 2 Cl 2 and CH 3 OH, while the carrier gas was N 2 .…”

Section: Methodsmentioning

confidence: 99%

Pt coated Cr2O3 thin films for resistive gas sensors

Kasikov¹,

Gerst²,

Kikas

et al. 2009

Open Physics

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Abstract:The resistive response of atomic layer deposited thin epitaxial α-Cr 2 O 3 (0 0 1) films, to H 2 and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a submonolayer amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion of chemical states, Pt 2+ and Pt 4+ , to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt 4+ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250°C. PACS

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“…[16]) from CrO 2 Cl 2 and CH 3 OH at 420 °C in a self-constructed hot-wall flow-type ALD reactor of small size [17,18]. The ALD apparatus includes a system for the optical monitoring of the growth [19,20]. Precursors were volatilized at -20 °C.…”

Section: Experimental 21 Preparation Of Sensing Elementsmentioning

confidence: 99%

C ‐plane chromia on c ‐plane sapphire

Tarre¹,

Carlotti

Gerst

et al. 2009

Phys. Status Solidi (c)

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Chromium oxide thin films were atomic layer deposited from CrO2Cl2 and CH3OH on α‐Al2O3(0 0 1) (c ‐sapphire) substrates at 420 °C. On the basis of X‐ray reflection evidence, the thickness of the films in a series prepared ranged from 4 to 400 nm. As it was ascertained by reflection high‐energy electron diffraction, the films grew epitaxially. Electron probe microanalysis showed that O/Cr atomic ratio in them was close to 1.5 and that the residual impurities were present in insignificant amounts. The rms roughness of the films measured by atomic‐force microscopy and X‐ray reflection was of the order of 1 nm or less. X‐ray diffraction and Raman scattering data suggested that the films were strained, and that the strain was tensile in the c direction and compressive in the c plane. According to the surface Brillouin scattering measurements, the elastic properties of the films differed only slightly from those for single‐crystal bulk chromia. The films, when surface activated with Pt nanoislands, had a moderate response to CO in air with the transition times in the range of tens of seconds. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Monitoring of atomic layer deposition by incremental dielectric reflection

Cited by 30 publications

References 9 publications

<title>Diagnostics of ultrathin dielectric layers by the method of differential reflection of light</title>

<title>Diagnostics of ultrathin dielectric layers by the method of differential reflection of light</title>

Pt coated Cr2O3 thin films for resistive gas sensors

C ‐plane chromia on c ‐plane sapphire

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