Monitoring Electrical Biasing of Pb(Zr0.2Ti0.8)O3 Ferroelectric Thin Films In Situ by DPC-STEM Imaging

Abstract

Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelectric properties. Therefore, a full microscopic understanding of the impact of the nanoscale defects on the ferroelectric switching dynamics is crucial. However, collecting real-time data at the atomic and nanoscale remains very challenging. In this work, we explore the ferroelectric response of a Pb(Zr0.2Ti0.8)O3 thin film ferroelectric capacitor to electrical biasing in situ in the transmission electron microscope. Using a combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and differential phase contrast (DPC)-STEM imaging we unveil the structural and polarization state of the ferroelectric thin film, integrated into a capacitor architecture, before and during biasing. Thus, we can correlate real-time changes in the DPC signal with the presence of misfit dislocations and ferroelastic domains. A reduction in the domain wall velocity of 24% is measured in defective regions of the film when compared to predominantly defect-free regions.

Electrochemical Processes and Reactions In Rechargeable Battery Materials Revealed via In Situ Transmission Electron Microscopy

“…However, the structural details obtained at high magnification indicate that a high beam density (dose rate) (see Section 4.1) should be performed, leading to a strong beam effect. Meanwhile, the morphology and [27] Copyright 2021, Multidisciplinary Digital Publishing Institute. Reproduced with permission.…”

“…Reproduced with permission. [ 27 ] Copyright 2021, Multidisciplinary Digital Publishing Institute. Reproduced with permission.…”

“…Electrochemical applications of in situ TEM based on open cell platforms. Reproduced with permission [27]. Copyright 2021, Multidisciplinary Digital Publishing Institute.…”

Extended Charge Layers in Metal-Oxide-Semiconductor Nanocapacitors Revealed by Operando Electron Holography

“…Result.-Specimen device adapted to operando electron holography: To this end, along with other groups [26][27][28][29][30][31], we have been developing the fabrication of what we call "specimen devices" (Fig. 1): an operational device that is both electron transparent and contacted on a chip for biasing in situ without the need of a nanoprobe [32].…”

Monitoring Bismuth Ferrite Domain Walls Behavior Under Electric Field With Atomic Resolution By In Situ Scanning Transmission Electron Microscopy

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